Luo Wei, Lin Liying, Huang Jie, Han Yu, Lau Kei May
Opt Lett. 2021 Sep 15;46(18):4514-4517. doi: 10.1364/OL.436320.
Direct epitaxy of InP quantum dot (QD) lasers on silicon (Si) provides an on-chip red laser source for integrated Si photonics with different applications. Here, we demonstrate the first, to the best of our knowledge, InP QD lasers directly grown on (001) Si. Combining highly emissive InP QDs and a GaAs/Si template with low defect density, continuous-wave (CW) lasing of micro-disk lasers (MDLs) on Si is achieved at room temperature. The lowest threshold of MDLs on Si is ∼500, without considering the micro-disk surface absorption efficiency of the pump power. The MDLs grown on the native GaAs substrate with the same growth and fabrication process are compared using statistical data analysis. Similar material characterization results and device performances on these two substrates further confirm the performance of QD lasers on Si. This demonstration paves the way for future realization of integrated photonic circuits with red and near-infrared (NIR) lasers on Si.
在硅（Si）上直接外延生长磷化铟（InP）量子点（QD）激光器可为具有不同应用的集成硅光子学提供片上红色激光源。在此，据我们所知，我们首次展示了在（001）Si上直接生长的InP QD激光器。通过结合高发射率的InP量子点和低缺陷密度的砷化镓/硅模板，在室温下实现了硅上微盘激光器（MDL）的连续波（CW）激射。在不考虑泵浦功率的微盘表面吸收效率的情况下，硅上MDL的最低阈值约为500。使用统计数据分析比较了在具有相同生长和制造工艺的原生砷化镓衬底上生长的MDL。在这两种衬底上相似的材料表征结果和器件性能进一步证实了硅上QD激光器的性能。这一演示为未来在硅上实现具有红色和近红外（NIR）激光器的集成光子电路铺平了道路。
