Maegami Yuriko, Okano Makoto, Cong Guangwei, Suzuki Keijiro, Ohno Morifumi, Narushima Toshihiro, Yokoyama Nobuyuki, Seki Miyoshi, Ohtsuka Minoru, Namiki Shu, Yamada Koji
Opt Lett. 2020 Apr 1;45(7):2095-2098. doi: 10.1364/OL.388267.
A simple low-loss fiber coupling structure consisting of a Si inverted-taper waveguide and a 435 nm wide and 290 nm thick SiN waveguide was fabricated with fully complementary metal-oxide semiconductor (CMOS)-compatible processes. The small SiN waveguide can expand to the optical field corresponding to a fiber with a mode-field diameter of 4.1 µm. The fiber-to-chip coupling losses were 0.25 and 0.51 dB/facet for quasi-TE and quasi-TM modes, respectively, at a 1550 nm wavelength. Polarization-dependent losses of the conversion in the Si-to-SiN waveguide transition and the fiber-to-chip coupling were less than 0.3 and 0.5 dB, respectively, in the wavelength range of 1520-1580 nm.
采用完全互补金属氧化物半导体(CMOS)兼容工艺制造了一种简单的低损耗光纤耦合结构,该结构由一个硅倒锥波导和一个宽435 nm、厚290 nm的氮化硅波导组成。小尺寸的氮化硅波导可以扩展到与模场直径为4.1 µm的光纤相对应的光场。在1550 nm波长下,准TE模和准TM模的光纤到芯片的耦合损耗分别为0.25和0.51 dB/面。在1520 - 1580 nm波长范围内,硅到氮化硅波导过渡以及光纤到芯片耦合中的转换偏振相关损耗分别小于0.3和0.5 dB。