Yi Xiaolin, Sun Dongyue, Zhao Weike, Li Hanwen, Zhang Long, Shi Yaocheng, Dai Daoxin
State Key Laboratory for Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Center for Optical & Electromagnetic Research, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou 310058, China.
Ningbo Research Institute, Zhejiang University, Ningbo 315100, China.
Nanophotonics. 2024 Sep 9;13(22):4149-4157. doi: 10.1515/nanoph-2024-0320. eCollection 2024 Sep.
Efficient coupling between optical fibers and on-chip photonic waveguides has long been a crucial issue for photonic chips used in various applications. Edge couplers (ECs) based on an inverse taper have seen widespread utilization due to their intrinsic broadband operation. However, it still remains a big challenge to realize polarization-insensitive low-loss ECs working at the O-band (1,260-1,360 nm), mainly due to the strong polarization dependence of the mode coupling/conversion and the difficulty to fabricate the taper tip with an ultra-small feature size. In this paper, a high-efficiency and polarization-insensitive O-band EC is proposed and demonstrated with great advantages that is fully compatible with the current 130-nm-node fabrication processes. By introducing an asymmetric bi-level dual-core mode converter, the fundamental mode confined in the thick core is evanescently coupled to that in the thin core, which has an expanded mode size matched well with the fiber and works well for both TE/TM-polarizations. Particularly, no bi-level junction in the propagation direction is introduced between the thick and thin waveguide sections, thereby breaking the critical limitation of ultra-small feature sizes. The calculated coupling loss is 0.44-0.56/0.48-0.61 dB across the O-band, while achieving 1-dB bandwidths exceeding 340/230 nm for the TE/TM-polarization modes. For the fabricated ECs, the peak coupling loss is ∼0.82 dB with a polarization dependent loss of ∼0.31 dB at the O-band when coupled to a fiber with a mode field diameter of 4 μm. It is expected that this coupling scheme promisingly provides a general solution even for other material platforms, e.g., lithium niobate, silicon nitride and so on.
长期以来,光纤与片上光子波导之间的高效耦合一直是各种应用中光子芯片的关键问题。基于反向锥度的边缘耦合器(EC)因其固有的宽带工作特性而得到广泛应用。然而,实现工作在O波段(1260 - 1360 nm)的偏振不敏感低损耗EC仍然是一个巨大挑战,主要原因是模式耦合/转换的强烈偏振依赖性以及制造具有超小特征尺寸的锥尖的困难。本文提出并展示了一种高效且偏振不敏感的O波段EC,其具有与当前130纳米节点制造工艺完全兼容的巨大优势。通过引入非对称双层双核模式转换器,厚芯中限制的基模与薄芯中的基模通过倏逝波耦合,薄芯具有与光纤匹配良好的扩展模式尺寸,并且对TE/TM两种偏振都能良好工作。特别地,在厚波导和薄波导段之间的传播方向上没有引入双层结,从而突破了超小特征尺寸的关键限制。计算得到的O波段耦合损耗为0.44 - 0.56/0.48 - 0.61 dB,同时TE/TM偏振模式的1 dB带宽超过340/230 nm。对于制造的EC,当与模场直径为4μm的光纤耦合时,在O波段的峰值耦合损耗约为0.82 dB,偏振相关损耗约为0.31 dB。预计这种耦合方案有望为其他材料平台,例如铌酸锂、氮化硅等,提供通用解决方案。