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用于电化学可切换单层二硫化钼晶体管的分子方法。

Molecular Approach to Electrochemically Switchable Monolayer MoS Transistors.

作者信息

Zhao Yuda, Bertolazzi Simone, Maglione Maria Serena, Rovira Concepció, Mas-Torrent Marta, Samorì Paolo

机构信息

University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, Strasbourg, F-67000, France.

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Networking Research Center on Bioengineering Biomaterials and Nanomedicine (CIBER-BBN), Campus de la UAB, Bellaterra, 08193, Spain.

出版信息

Adv Mater. 2020 May;32(19):e2000740. doi: 10.1002/adma.202000740. Epub 2020 Apr 2.

Abstract

As Moore's law is running to its physical limit, tomorrow's electronic systems can be leveraged to a higher value by integrating "More than Moore" technologies into CMOS digital circuits. The hybrid heterostructure composed of two-dimensional (2D) semiconductors and molecular materials represents a powerful strategy to confer new properties to the former components, realize stimuli-responsive functional devices, and enable diversification in "More than Moore" technologies. Here, an ionic liquid (IL) gated 2D MoS field-effect transistor (FET) with molecular functionalization is fabricated. The suitably designed ferrocene-substituted alkanethiol molecules not only improve the FET performance, but also show reversible electrochemical switching on the surface of MoS . Field-effect mobility of monolayer MoS reaches values as high as ≈116 cm V s with I /I ratio exceeding 10 . Molecules in their neutral or charged state impose distinct doping effect, efficiently tuning the electron density in monolayer MoS . It is noteworthy that the joint doping effect from IL and switchable molecules results in the steep subthreshold swing of MoS FET in the backward sweep. These results demonstrate that the device architecture represents an unprecedented and powerful strategy to fabricate switchable 2D FET with a chemically programmed electrochemical signal as a remote control, paving the road toward novel functional devices.

摘要

随着摩尔定律逐渐逼近其物理极限,通过将“超越摩尔”技术集成到CMOS数字电路中,未来的电子系统能够发挥更高的价值。由二维(2D)半导体和分子材料组成的混合异质结构是一种强大的策略,可为前者赋予新特性,实现刺激响应功能器件,并推动“超越摩尔”技术的多样化发展。在此,制备了一种具有分子功能化的离子液体(IL)门控二维MoS场效应晶体管(FET)。经过适当设计的二茂铁取代的链烷硫醇分子不仅提高了FET的性能,还在MoS表面表现出可逆的电化学开关特性。单层MoS的场效应迁移率高达≈116 cm² V⁻¹ s⁻¹,Ion/Ioff比值超过10⁷。处于中性或带电状态的分子会产生不同的掺杂效应,有效调节单层MoS中的电子密度。值得注意的是,IL和可切换分子的联合掺杂效应导致MoS FET在反向扫描时具有陡峭的亚阈值摆幅。这些结果表明,该器件架构代表了一种前所未有的强大策略,可制造出以化学编程的电化学信号作为远程控制的可切换二维FET,为新型功能器件铺平了道路。

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