Li Xueyan, Zhang Xi, Lv Xiaowei, Pang Jun, Lei Li, Liu Yong, Peng Yong, Xiang Gang
College of Physics, Sichuan University, Chengdu 610064, People's Republic of China.
Nanotechnology. 2020 Apr 24;31(28):285702. doi: 10.1088/1361-6528/ab8668. Epub 2020 Apr 3.
We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82 × 10 mm) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular nanoplate were statistically estimated by atomic force microscopy as 44 nm, 365 nm, 458 nm and 605 nm, respectively. Transmission electron microscopy (TEM) images and x-ray diffraction patterns show that the TNAs were composed of single crystalline GeSe phase. The Se-related defects in the lattice were also revealed by TEM images and Raman vibration modes. Unlike previously reported GeSe compounds, the GeSe TNAs exhibited temperature-dependent photoluminescence (PL). The PL peak (1.25 eV) of the TNAs at 5 K was in the gaps between those of GeSe monolayers and a few hundred thick films, revealing a close relationship between the PL peak and the thickness of GeSe. The high-density structure and temperature-dependent PL of the TNAs on the Si substrate may be useful for temperature controllable semiconductor nanodevices.
我们使用简单的热蒸发方法在硅（111）衬底上生长出了高密度（3.82×10毫米）的硒化锗（GeSe）三角形纳米片阵列（TNA）。通过原子力显微镜统计估计单个三角形纳米片的厚度和三边长度分别为44纳米、365纳米、458纳米和605纳米。透射电子显微镜（TEM）图像和X射线衍射图谱表明，TNA由单晶GeSe相组成。TEM图像和拉曼振动模式也揭示了晶格中与硒相关的缺陷。与先前报道的GeSe化合物不同，GeSe TNA表现出温度依赖的光致发光（PL）。TNA在5K时的PL峰（1.25电子伏特）处于GeSe单层和几百纳米厚薄膜的PL峰之间的间隙中，揭示了PL峰与GeSe厚度之间的密切关系。硅衬底上TNA的高密度结构和温度依赖的PL可能对温度可控的半导体纳米器件有用。
