Hu Xiaozong, Huang Pu, Liu Kailang, Jin Bao, Zhang Xun, Zhang Xiuwen, Zhou Xing, Zhai Tianyou
State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China.
Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology , Shenzhen University , Nanhai Avenue 3688 , Shenzhen , Guangdong 518060 , P. R. China.
ACS Appl Mater Interfaces. 2019 Jul 3;11(26):23353-23360. doi: 10.1021/acsami.9b06425. Epub 2019 Jun 24.
Two-dimensional (2D) GeSe is an important IVA-VIA semiconductor for future applications in electronics and optoelectronics because of its high absorption coefficient, mobility, and photoresponsivity. However, the controllable synthesis of 2D GeSe flakes is still a huge problem. Here, high-quality single-crystalline ultrathin 2D GeSe flakes are synthesized by a salt-assisted chemical vapor deposition method. The flakes tend to grow along the [010] crystal orientation presenting a rectangular shape with a thickness down to 5 nm. Then, the electrical and optoelectronic properties have been systematically investigated. A thickness-dependent Schottky barrier is shown in GeSe field-effect transistors. The p-type conductivity of GeSe is mainly caused by the Ge deficiency, which is proven by a variable-temperature experiment and theoretical calculations. In addition, the phototransistors based on as-grown GeSe flakes present an ultrahigh responsivity of 1.8 × 10 A/W and an excellent external quantum efficiency of 4.2 × 10%.
二维（2D）锗硒是一种重要的IVA-VIA族半导体，因其具有高吸收系数、迁移率和光响应性，在未来电子学和光电子学领域具有应用潜力。然而，二维锗硒薄片的可控合成仍然是一个巨大的难题。在此，通过盐辅助化学气相沉积法合成了高质量的单晶超薄二维锗硒薄片。这些薄片倾向于沿[010]晶体取向生长，呈现出矩形形状，厚度低至5纳米。然后，对其电学和光电性能进行了系统研究。在锗硒场效应晶体管中展示了厚度依赖的肖特基势垒。锗硒的p型导电性主要由锗缺陷引起，这通过变温实验和理论计算得到了证实。此外，基于生长态锗硒薄片的光电晶体管呈现出1.8×10 A/W的超高响应率和4.2×10%的优异外量子效率。
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