Xu Zhiwei, Byun Sangjin
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
Sensors (Basel). 2020 Apr 6;20(7):2053. doi: 10.3390/s20072053.
This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CMOS process with general V transistors and the active die area was 0.432 mm. The temperature resolution was 0.49 °C and the temperature error was from -1.6 to +0.6 °C over the range of 0 to 100 °C after two-point calibration. The supply voltage sensitivity was 0.085 °C/mV. The conversion rate was 25kHz and the energy efficiency was 7.2 nJ/sample.
本文介绍了一种新型的时域CMOS温度传感器,它具有9位逐次逼近寄存器(SAR)控制逻辑和精细延迟线。我们采用N型多晶硅电阻作为温度线性的传感元件。该芯片采用标准的0.18μm 1P6M体CMOS工艺,使用普通的V晶体管实现,有源芯片面积为0.432平方毫米。经过两点校准后,在0至100°C的温度范围内,温度分辨率为0.49°C,温度误差为-1.6至+0.6°C。电源电压灵敏度为0.085°C/mV。转换速率为25kHz,能量效率为7.2 nJ/样本。