光刻法构建的单根氧化锌纳米线器件及其紫外光响应

Photolithographically Constructed Single ZnO Nanowire Device and Its Ultraviolet Photoresponse.

作者信息

Liu Quanli, Yasui Takao, Nagashima Kazuki, Yanagida Takeshi, Horiuchi Masafumi, Zhu Zetao, Takahashi Hiromi, Shimada Taisuke, Arima Akihide, Baba Yoshinobu

机构信息

Department of Biomolecular Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya, 464-8603, Japan.

Japan Science and Technology Agency (JST), PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan.

出版信息

Anal Sci. 2020 Sep 10;36(9):1125-1129. doi: 10.2116/analsci.20N002. Epub 2020 Apr 17.

DOI:10.2116/analsci.20N002

PMID:32307346

Abstract

A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 μm/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current-voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an I/I of ∼100 to ultraviolet light irradiation.

摘要

通过在纳米线生长初期控制种子密度，合成了长径比约为120且生长速率为1μm/h的稀疏ZnO纳米线阵列。空间分离的纳米线从生长衬底上被切断而不折断，因此可用于通过光刻构建单纳米线器件。该器件表现出与ZnO纳米线和电极之间的欧姆接触相关的线性电流-电压特性。该器件对紫外光照射进一步表现出可靠的光响应，光电流比I/I约为100。