Zhang Jizhen, Kong Na, Uzun Simge, Levitt Ariana, Seyedin Shayan, Lynch Peter A, Qin Si, Han Meikang, Yang Wenrong, Liu Jingquan, Wang Xungai, Gogotsi Yury, Razal Joselito M
Institute for Frontier Materials, Deakin University, Geelong, Victoria, 3216, Australia.
School of Life and Environmental Sciences, Deakin University, Geelong, Victoria, 3216, Australia.
Adv Mater. 2020 Jun;32(23):e2001093. doi: 10.1002/adma.202001093. Epub 2020 Apr 20.
Free-standing films that display high strength and high electrical conductivity are critical for flexible electronics, such as electromagnetic interference (EMI) shielding coatings and current collectors for batteries and supercapacitors. 2D Ti C T flakes are ideal candidates for making conductive films due to their high strength and metallic conductivity. It is, however, challenging to transfer those outstanding properties of single MXene flakes to macroscale films as a result of the small flake size and relatively poor flake alignment that occurs during solution-based processing. Here, a scalable method is shown for the fabrication of strong and highly conducting pure MXene films containing highly aligned large MXene flakes. These films demonstrate record tensile strength up to ≈570 MPa for a 940 nm thick film and electrical conductivity of ≈15 100 S cm for a 214 nm thick film, which are both the highest values compared to previously reported pure Ti C T films. These films also exhibit outstanding EMI shielding performance (≈50 dB for a 940 nm thick film) that exceeds other synthetic materials with comparable thickness. MXene films with aligned flakes provide an effective route for producing large-area, high-strength, and high-electrical-conductivity MXene-based films for future electronic applications.
具有高强度和高导电性的独立式薄膜对于柔性电子产品至关重要，例如电磁干扰（EMI）屏蔽涂层以及电池和超级电容器的集流体。二维Ti C T薄片因其高强度和金属导电性而成为制备导电薄膜的理想候选材料。然而，由于薄片尺寸小以及在基于溶液的加工过程中出现的薄片排列相对较差，将单个MXene薄片的这些优异性能转移到宏观薄膜上具有挑战性。在此，展示了一种可扩展的方法来制备包含高度排列的大尺寸MXene薄片的强且高导电的纯MXene薄膜。对于940nm厚的薄膜，这些薄膜的拉伸强度高达≈570MPa，对于214nm厚的薄膜，电导率为≈15100S/cm，与先前报道的纯Ti C T薄膜相比，这两个值均为最高。这些薄膜还表现出出色的EMI屏蔽性能（940nm厚的薄膜约为50dB），超过了其他具有可比厚度的合成材料。具有排列薄片的MXene薄膜为未来电子应用生产大面积、高强度和高导电性的MXene基薄膜提供了一条有效途径。
