IEEE Trans Ultrason Ferroelectr Freq Control. 2020 Sep;67(9):1931-1937. doi: 10.1109/TUFFC.2020.2991647. Epub 2020 Apr 30.
This work investigates the role of microstructure on the radiation tolerance of relaxor-ferroelectric, lead magnesium niobate-lead titanate, thin films for piezoelectric microelectromechanical system (MEMS) applications. Thin films comprised of 0.7Pb[MgNb]O-0.3PbTiO were fabricated via chemical solution deposition on platinized silicon wafers. Processing parameters, i.e., pyrolysis and annealing temperatures and durations, were varied to change the microstructure of the films. The functional response of the films was characterized before and after exposure to gamma radiation [up to 10 Mrad(Si)]. Within the total ionization dose studied, all films showed a <5% change in dielectric response and polarization and <15% change in piezoelectric response, after irradiation. While all films showed substantial radiation tolerance, those with large columnar grains showed the highest dielectric and piezoelectric response and, therefore, might offer the best approach for enabling piezoelectric MEMS devices for applications in radiative environments.
这项工作研究了微结构对弛豫铁电体（PMN-PT）薄膜辐射耐受性的作用，PMN-PT 薄膜用于压电微机电系统（MEMS）应用。通过化学溶液沉积在镀铂硅片上制备了由 0.7Pb[MgNb]O-0.3PbTiO 组成的薄膜。通过改变热解和退火温度及时间等工艺参数来改变薄膜的微结构。在辐照之前和之后，对薄膜的功能响应进行了表征[最高辐照剂量为 10 Mrad(Si)]。在所研究的总电离剂量范围内，所有薄膜的介电响应和极化变化均小于 5%，经辐照后压电响应变化均小于 15%。虽然所有薄膜都表现出很强的辐射耐受性，但那些具有大柱状晶粒的薄膜表现出最高的介电和压电响应，因此可能为在辐射环境中应用的压电 MEMS 器件提供了最佳方法。
