Two-Dimensional Unipolar Memristors with Logic and Memory Functions.

Two-dimensional materials have been widely used in electronics due to their electrical properties that are not accessible in traditional materials. Here, we present the first demonstration of logic functions of unipolar memristors made of functionalized HfSeO flakes and memtransistors made of MoS/graphene/HfSeO van der Waals heterostructures. The two-terminal memristors exhibit stable unipolar switching behavior with high switching ratio (>10), high operating temperature (106 °C), long-term endurance (>10 s), and multibit data storage and can operate as memory latches and logic gates. Benefiting from these superior memristive properties, the three-terminal heterostructure memtransistors show wide tunability in electrical switching behaviors, which can simultaneously implement logic operation and data storage. Finally, we investigate their application prospect in logical units with memory capability, such as D-type flip-flop. These results demonstrate the potential of two-dimensional materials for resistive switching applications and open up an avenue for future in-memory computing.