Yin Lei, Cheng Ruiqing, Wang Zhenxing, Wang Feng, Sendeku Marshet Getaye, Wen Yao, Zhan Xueying, He Jun
CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China.
Nano Lett. 2020 Jun 10;20(6):4144-4152. doi: 10.1021/acs.nanolett.0c00002. Epub 2020 May 8.
Two-dimensional materials have been widely used in electronics due to their electrical properties that are not accessible in traditional materials. Here, we present the first demonstration of logic functions of unipolar memristors made of functionalized HfSeO flakes and memtransistors made of MoS/graphene/HfSeO van der Waals heterostructures. The two-terminal memristors exhibit stable unipolar switching behavior with high switching ratio (>10), high operating temperature (106 °C), long-term endurance (>10 s), and multibit data storage and can operate as memory latches and logic gates. Benefiting from these superior memristive properties, the three-terminal heterostructure memtransistors show wide tunability in electrical switching behaviors, which can simultaneously implement logic operation and data storage. Finally, we investigate their application prospect in logical units with memory capability, such as D-type flip-flop. These results demonstrate the potential of two-dimensional materials for resistive switching applications and open up an avenue for future in-memory computing.
二维材料因其具有传统材料所不具备的电学特性，已在电子学领域得到广泛应用。在此，我们首次展示了由功能化HfSeO薄片制成的单极忆阻器以及由MoS/石墨烯/HfSeO范德华异质结构制成的忆晶体管的逻辑功能。两终端忆阻器表现出稳定的单极开关行为，具有高开关比（>10）、高工作温度（106°C）、长期耐久性（>10 s）以及多位数据存储能力，并且可以用作存储锁存器和逻辑门。受益于这些优异的忆阻特性，三终端异质结构忆晶体管在电开关行为方面表现出广泛的可调性，能够同时实现逻辑运算和数据存储。最后，我们研究了它们在具有存储能力的逻辑单元（如D型触发器）中的应用前景。这些结果证明了二维材料在电阻式开关应用中的潜力，并为未来的内存计算开辟了一条道路。
