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在魔角石墨烯中绘制扭曲角无序和朗道能级。

Mapping the twist-angle disorder and Landau levels in magic-angle graphene.

机构信息

Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.

Department of Physics, Osaka University, Toyonaka, Japan.

出版信息

Nature. 2020 May;581(7806):47-52. doi: 10.1038/s41586-020-2255-3. Epub 2020 May 6.

Abstract

The recently discovered flat electronic bands and strongly correlated and superconducting phases in magic-angle twisted bilayer graphene (MATBG) crucially depend on the interlayer twist angle, θ. Although control of the global θ with a precision of about 0.1 degrees has been demonstrated, little information is available on the distribution of the local twist angles. Here we use a nanoscale on-tip scanning superconducting quantum interference device (SQUID-on-tip) to obtain tomographic images of the Landau levels in the quantum Hall state and to map the local θ variations in hexagonal boron nitride (hBN)-encapsulated MATBG devices with relative precision better than 0.002 degrees and a spatial resolution of a few moiré periods. We find a correlation between the degree of θ disorder and the quality of the MATBG transport characteristics and show that even state-of-the-art devices-which exhibit correlated states, Landau fans and superconductivity-display considerable local variation in θ of up to 0.1 degrees, exhibiting substantial gradients and networks of jumps, and may contain areas with no local MATBG behaviour. We observe that the correlated states in MATBG are particularly fragile with respect to the twist-angle disorder. We also show that the gradients of θ generate large gate-tunable in-plane electric fields, unscreened even in the metallic regions, which profoundly alter the quantum Hall state by forming edge channels in the bulk of the sample and may affect the phase diagram of the correlated and superconducting states. We thus establish the importance of θ disorder as an unconventional type of disorder enabling the use of twist-angle gradients for bandstructure engineering, for realization of correlated phenomena and for gate-tunable built-in planar electric fields for device applications.

摘要

最近在魔角扭曲双层石墨烯(MATBG)中发现的平带电子态和强关联超导相,关键取决于层间扭转角θ。虽然已经证明了用精度约为 0.1 度的方法控制全局θ,但关于局部扭转角分布的信息却很少。在这里,我们使用纳米尺度尖端扫描超导量子干涉装置(SQUID-on-tip),在六方氮化硼(hBN)封装的 MATBG 器件中获得量子霍尔态的朗道能级层析成像,并以优于 0.002 度的相对精度和几个莫尔周期的空间分辨率来绘制局部θ变化图。我们发现θ无序的程度与 MATBG 输运特性的质量之间存在相关性,并表明即使是具有关联态、朗道扇区和超导性的最先进的器件,也表现出相当大的局部θ变化,达到 0.1 度,表现出相当大的梯度和跳跃网络,并且可能包含没有局部 MATBG 行为的区域。我们观察到,MATBG 中的关联态对扭转角无序特别敏感。我们还表明,θ梯度会产生大的栅极可调平面内电场,即使在金属区域也无法屏蔽,这些电场通过在样品的体中形成边缘通道,深刻地改变了量子霍尔态,并可能影响关联态和超导态的相图。因此,我们确立了θ无序作为一种非常规类型的无序的重要性,它可以用于带结构工程、实现关联现象以及用于栅极可调内置平面电场的器件应用。

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