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扭曲双层石墨烯中范德华界面处的原子和电子重构。

Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene.

作者信息

Yoo Hyobin, Engelke Rebecca, Carr Stephen, Fang Shiang, Zhang Kuan, Cazeaux Paul, Sung Suk Hyun, Hovden Robert, Tsen Adam W, Taniguchi Takashi, Watanabe Kenji, Yi Gyu-Chul, Kim Miyoung, Luskin Mitchell, Tadmor Ellad B, Kaxiras Efthimios, Kim Philip

机构信息

Department of Physics, Harvard University, Cambridge, MA, USA.

Aerospace Engineering and Mechanics, University of Minnesota, Minneapolis, MN, USA.

出版信息

Nat Mater. 2019 May;18(5):448-453. doi: 10.1038/s41563-019-0346-z. Epub 2019 Apr 15.

Abstract

Control of the interlayer twist angle in two-dimensional van der Waals (vdW) heterostructures enables one to engineer a quasiperiodic moiré superlattice of tunable length scale. In twisted bilayer graphene, the simple moiré superlattice band description suggests that the electronic bandwidth can be tuned to be comparable to the vdW interlayer interaction at a 'magic angle', exhibiting strongly correlated behaviour. However, the vdW interlayer interaction can also cause significant structural reconstruction at the interface by favouring interlayer commensurability, which competes with the intralayer lattice distortion. Here we report atomic-scale reconstruction in twisted bilayer graphene and its effect on the electronic structure. We find a gradual transition from an incommensurate moiré structure to an array of commensurate domains with soliton boundaries as we decrease the twist angle across the characteristic crossover angle, θ ≈ 1°. In the solitonic regime (θ < θ) where the atomic and electronic reconstruction become significant, a simple moiré band description breaks down and the secondary Dirac bands appear. On applying a transverse electric field, we observe electronic transport along the network of one-dimensional topological channels that surround the alternating triangular gapped domains. Atomic and electronic reconstruction at the vdW interface provide a new pathway to engineer the system with continuous tunability.

摘要

控制二维范德华(vdW)异质结构中的层间扭转角,能够使人们构建出长度尺度可调的准周期莫尔超晶格。在扭曲双层石墨烯中,简单的莫尔超晶格能带描述表明,在“魔角”处电子带宽可被调谐至与范德华层间相互作用相当,从而呈现出强关联行为。然而,范德华层间相互作用也会通过促进层间 commensurability 在界面处引起显著的结构重构,这与层内晶格畸变相互竞争。在此,我们报道了扭曲双层石墨烯中的原子尺度重构及其对电子结构的影响。我们发现,当我们在特征交叉角θ≈1°范围内减小扭转角时,会从非 commensurate 莫尔结构逐渐过渡到具有孤子边界的 commensurate 畴阵列。在孤子区域(θ < θ),原子和电子重构变得显著,简单的莫尔能带描述失效,二级狄拉克能带出现。施加横向电场时,我们观察到电子沿着围绕交替三角形带隙畴的一维拓扑通道网络进行传输。范德华界面处的原子和电子重构为构建具有连续可调性的系统提供了一条新途径。

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