Yang Guixia, Wu Kunlin, Liu Jianyong, Zou Dehui, Li Junjie, Lu Yi, Lv Xueyang, Xu Jiayun, Qiao Liang, Liu Xuqiang
Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China.
Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China.
Nanomaterials (Basel). 2020 May 5;10(5):886. doi: 10.3390/nano10050886.
Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect could be greatly reduced by increasing the doping concentration in the flux range of 5 × 10-5 × 10 n cm s. The simulation based on the theory of diffusion-limited reactions indicated that the ELNFS in boron-doped silicon might be caused by the difference in the concentration of remaining vacancy-related defects () under different neutron fluxes. The ELNFS effect in silicon becomes obvious when the () is close to the boron doping concentration and decreased with the increase in boron doping concentration due to the remaining vacancy-related defects being covered. These conclusions are confirmed by the p-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain () dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. Our work demonstrates that the ELNFS effect in boron-doped silicon can be well explained by noise diagnostic analysis together with electrical methods and simulation, which thus provide the basis for detecting the enhanced low-particle-flux damage effect in other semiconductor materials.
空间粒子辐照会在半导体器件中产生电离损伤和位移损伤。由电离损伤引起的增强低剂量率敏感性（ELDRS）效应已引起广泛关注。然而，由位移损伤引起的增强低粒子通量敏感性效应及其诱导机制存在争议。本文进一步探讨了硼掺杂硅中的增强低中子通量敏感性（ELNFS）效应以及ELNFS效应与掺杂浓度之间的关系。硼掺杂硅对中子通量敏感，在5×10⁻⁵×10 n cm⁻² s⁻¹的通量范围内，通过增加掺杂浓度可大大降低ELNFS效应。基于扩散限制反应理论的模拟表明，硼掺杂硅中的ELNFS可能是由不同中子通量下剩余空位相关缺陷（）浓度的差异引起的。当（）接近硼掺杂浓度时，硅中的ELNFS效应变得明显，并随着硼掺杂浓度的增加而降低，这是由于剩余空位相关缺陷被覆盖。这些结论通过p-n-p硅基双极晶体管得到了证实，因为低掺杂硅中的ELNFS效应增加了双极晶体管的反向泄漏，而由高掺杂硅主导的共发射极电流增益（）随着中子通量的降低保持不变。我们的工作表明，硼掺杂硅中的ELNFS效应可以通过噪声诊断分析以及电学方法和模拟得到很好的解释，从而为检测其他半导体材料中的增强低粒子通量损伤效应提供了依据。
