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单层VSe中重构的硒缺陷线缺陷能诱导磁性吗?

Can Reconstructed Se-Deficient Line Defects in Monolayer VSe Induce Magnetism?

作者信息

Chua Rebekah, Yang Jing, He Xiaoyue, Yu Xiaojiang, Yu Wei, Bussolotti Fabio, Wong Ping Kwan Johnny, Loh Kian Ping, Breese Mark B H, Goh Kuan Eng Johnson, Huang Yu Li, Wee Andrew T S

机构信息

NUS Graduate School for Integrative Sciences & Engineering (NGS), University Hall, Tan Chin Tuan Wing, 21 Lower Kent Ridge, Singapore, 119077, Singapore.

Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore.

出版信息

Adv Mater. 2020 Jun;32(24):e2000693. doi: 10.1002/adma.202000693. Epub 2020 May 8.

Abstract

There have been several recent conflicting reports on the ferromagnetism of clean monolayer VSe . Herein, the controllable formation of 1D defect line patterns in vanadium diselenide (VSe ) monolayers initiated by thermal annealing is presented. Using scanning tunneling microscopy and q-plus atomic force microscopy techniques, the 1D line features are determined to be 8-member-ring arrays, formed via a Se deficient reconstruction process. The reconstructed VSe monolayer with Se-deficient line defects displays room-temperature ferromagnetism under X-ray magnetic circular dichroism and magnetic force microscopy, consistent with the density functional theory calculations. This study possibly resolves the controversy on whether ferromagnetism is intrinsic in monolayer VSe , and highlights the importance of controlling and understanding the atomic structures of surface defects in 2D crystals, which could play key roles in the material properties and hence potential device applications.

摘要

最近有几篇关于清洁单层VSe铁磁性的相互矛盾的报道。在此,本文展示了通过热退火在二硒化钒(VSe)单层中可控形成一维缺陷线图案。使用扫描隧道显微镜和q加原子力显微镜技术,确定一维线特征为8元环阵列,其通过硒缺陷重构过程形成。具有硒缺陷线缺陷的重构VSe单层在X射线磁圆二色性和磁力显微镜下表现出室温铁磁性,这与密度泛函理论计算结果一致。这项研究可能解决了关于单层VSe中铁磁性是否为固有属性的争议,并突出了控制和理解二维晶体表面缺陷原子结构的重要性,这些缺陷可能在材料特性以及潜在的器件应用中发挥关键作用。

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