Lu Chun-I, Huang Chih-Heng, Ou Yang Kui-Hon, Simbulan Kristan Bryan, Li Kai-Shin, Li Feng, Qi Junjie, Jugovac Matteo, Cojocariu Iulia, Feyer Vitaliy, Tusche Christian, Lin Minn-Tsong, Chuang Tzu-Hung, Lan Yann-Wen, Wei Der-Hsin
Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan.
Nanoscale Horiz. 2020 Jul 1;5(7):1058-1064. doi: 10.1039/d0nh00108b. Epub 2020 May 13.
Magnetic anisotropy (MA) is a material preference that involves magnetization aligned along a specific direction and provides a basis for spintronic devices. Here we report the first observation of strong MA in a cobalt-molybdenum disulfide (Co/MoS) heterojunction. Element-specific magnetic images recorded with an X-ray photoemission electron microscope (PEEM) reveal that ultrathin Co films, of thickness 5 monolayers (ML) and above, form micrometer (μm)-sized domains on monolayer MoS flakes of size tens of μm. Image analysis shows that the magnetization of these Co domains is oriented not randomly but in directions apparently correlated with the crystal structure of the underlying MoS. Evidence from micro-area X-ray photoelectron spectra (μ-XPS) further indicates that a small amount of charge is donated from cobalt to sulfur upon direct contact between Co and MoS. As the ferromagnetic behavior found for Co/MoS is in sharp contrast with that reported earlier for non-reactive Fe/MoS, we suggest that orbital hybridization at the interface is what makes Co/MoS different. Our report provides micro-magnetic and micro-spectral evidence that consolidates the knowledge required to build functional heterojunctions based on two-dimensional (2D) materials.
磁各向异性(MA)是一种材料偏好,涉及沿特定方向排列的磁化,为自旋电子器件提供了基础。在此,我们报告了在钴 - 二硫化钼(Co/MoS)异质结中首次观察到强磁各向异性。用X射线光电子发射电子显微镜(PEEM)记录的元素特异性磁图像显示,厚度为5个单层(ML)及以上的超薄Co膜在尺寸为数十微米的单层MoS薄片上形成微米(μm)级别的畴。图像分析表明,这些Co畴的磁化并非随机取向,而是明显与下层MoS的晶体结构相关的方向。微区X射线光电子能谱(μ-XPS)的证据进一步表明,Co与MoS直接接触时,少量电荷从钴转移到硫。由于Co/MoS中发现的铁磁行为与早期报道的非反应性Fe/MoS的行为形成鲜明对比,我们认为界面处的轨道杂化是Co/MoS不同的原因。我们的报告提供了微观磁性和微观光谱证据,巩固了基于二维(2D)材料构建功能异质结所需的知识。