Voroshnin Vladimir, Tarasov Artem V, Bokai Kirill A, Chikina Alla, Senkovskiy Boris V, Ehlen Niels, Usachov Dmitry Yu, Grüneis Alexander, Krivenkov Maxim, Sánchez-Barriga Jaime, Fedorov Alexander
Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Strasse 24/25, Potsdam 14476, Germany.
St. Petersburg State University, St. Petersburg 198504, Russia.
ACS Nano. 2022 May 24;16(5):7448-7456. doi: 10.1021/acsnano.1c10391. Epub 2022 Apr 20.
A magnetic field modifies optical properties and provides valley splitting in a molybdenum disulfide (MoS) monolayer. Here we demonstrate a scalable approach to the epitaxial synthesis of MoS monolayer on a magnetic graphene/Co system. Using spin- and angle-resolved photoemission spectroscopy we observe a magnetic proximity effect that causes a 20 meV spin-splitting at the Γ̅ point and canting of spins at the K̅ point in the valence band toward the in-plane direction of cobalt magnetization. Our density functional theory calculations reveal that the in-plane spin component at K̅ is localized on Co atoms in the valence band, while in the conduction band it is localized on the MoS layer. The calculations also predict a 16 meV spin-splitting at the Γ̅ point and 8 meV K̅- valley asymmetry for an out-of-plane magnetization. These findings suggest control over optical transitions in MoS via Co magnetization. Our estimations show that the magnetic proximity effect is equivalent to the action of the magnetic field as large as 100 T.
磁场会改变光学性质,并在二硫化钼(MoS)单层中产生能谷分裂。在此,我们展示了一种在磁性石墨烯/钴体系上外延合成MoS单层的可扩展方法。利用自旋和角分辨光电子能谱,我们观察到一种磁近邻效应,该效应在Γ̅点导致20毫电子伏特的自旋分裂,并使价带中K̅点的自旋向钴磁化的面内方向倾斜。我们的密度泛函理论计算表明,K̅点的面内自旋分量在价带中定域于钴原子上,而在导带中则定域于MoS层上。计算还预测,对于面外磁化,在Γ̅点有16毫电子伏特的自旋分裂以及8毫电子伏特的K̅谷不对称性。这些发现表明可通过钴磁化来控制MoS中的光学跃迁。我们的估计表明,磁近邻效应相当于高达100特斯拉的磁场作用。