Hussain Zainab, Patole Shashikant P, Shaikh Shoyebmohamad F, Lokhande P E, Pathan Habib M
Advanced Physics Laboratory, Department of Physics, Savitribai Phule Pune University, Pune, 411007, India.
Department of Physics, Khalifa University of Science and Technology, P.O. Box 127788, Abu Dhabi, United Arab Emirates.
Sci Rep. 2024 Mar 1;14(1):5064. doi: 10.1038/s41598-024-54316-1.
Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS ). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS on the magnetic properties of the 10 nm Co layer. A comparative study on and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS . The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS layer. Furthermore, our results will help in developing next-generation spintronic devices.
理解金属-半导体异质结构界面对于自旋电子器件的发展至关重要。二硫化钼（MoS₂）是一种有前景的候选材料且是被广泛研究的半导体之一。在此，利用克尔显微镜，我们研究了厚MoS₂对10纳米钴层磁性能的影响。对Co/MoS₂和Co/Si的对比研究表明，与生长在硅衬底上的钴相比，矫顽力增加了77%，克尔信号降低了26%。此外，当在MoS₂上生长时，钴的畴结构发生了显著变化。观察到的磁行为的合理原因可能是，与硅相比，钴在MoS₂界面处的相互作用不同。因此，我们的研究探讨了厚MoS₂层上生长的钴的磁性能的界面效应。此外，我们的结果将有助于开发下一代自旋电子器件。
