Pan Haiyang, Wang Qiaoming, Wu Xiaohua, Song Tingting, Song Qiuming, Wang Jue
Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China. Department of Physics, Southeast University, Nanjing 211189, People's Republic of China.
Nanotechnology. 2020 Aug 28;31(35):355001. doi: 10.1088/1361-6528/ab92cb. Epub 2020 May 13.
The development of the dry transfer method provides an abundant platform to construct various heterostructures of two-dimensional materials. However, the surface and interface cleanliness are essential to realize high electronical performance of heterostructures devices. Here, we demonstrated thermal annealing effect on the mobility and electrical transport properties of graphene on hexagonal boron nitride heterostructures devices. With different annealing temperature recipes for graphene on hexagonal boron nitride devices, we found annealing temperature at 300 °C can clean resist residual and achieve high mobility. Atomic force microscopy results also present a clean surface and small average root mean square roughness as low as 210 pm. Well defined oscillations and plateaus of electrical transport at low magnetic field indicate a high-quality graphene surface.
干转移方法的发展为构建二维材料的各种异质结构提供了丰富的平台。然而，表面和界面的清洁度对于实现异质结构器件的高电子性能至关重要。在此，我们展示了热退火对六方氮化硼异质结构器件上石墨烯的迁移率和电输运性质的影响。通过对六方氮化硼器件上的石墨烯采用不同的退火温度方案，我们发现300°C的退火温度可以清除光刻胶残留并实现高迁移率。原子力显微镜结果还显示出清洁的表面以及低至210 pm的小平均均方根粗糙度。在低磁场下电输运的明确振荡和平原表明石墨烯表面质量很高。
