Sahu Dwipak Prasad, Jammalamadaka S Narayana
Magnetic Materials and Device Physics Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Hyderabad 502 285, India.
Nanotechnology. 2020 Aug 28;31(35):355202. doi: 10.1088/1361-6528/ab9328. Epub 2020 May 14.
We report on the resistive switching characteristics of an HoCrO (HCO) based memristor device. The device comprising Ag/HCO/fluorine doped tin oxide shows stable bipolar resistive switching with a good ON/OFF resistance ratio between high resistance state (HRS) and low resistance state (LRS). Furthermore, the device is capable to show excellent endurance and retentivity characteristics over a period of 30 days. The statistical distribution of the switching parameters (voltage and resistance) show a narrow distribution, hinting reliable memory performance and stability of the device. Impedance spectroscopy analysis of the HRS and LRS illustrates a bulk resistance effect, which is due to formation of multiple ionic conductive channels in the film with oxygen vacancies. Indeed, conducting channels formed by oxygen vacancies are further confirmed by calculating the temperature coefficient of resistance through resistance vs temperature measurements. We believe that these results will be helpful in developing future memory devices based on resistive switching.
我们报道了一种基于HoCrO（HCO）的忆阻器器件的电阻开关特性。该器件由Ag/HCO/氟掺杂氧化锡组成，在高电阻状态（HRS）和低电阻状态（LRS）之间表现出稳定的双极电阻开关特性，具有良好的开/关电阻比。此外，该器件在30天的时间内能够表现出优异的耐久性和保持性。开关参数（电压和电阻）的统计分布显示出狭窄的分布，这表明该器件具有可靠的存储性能和稳定性。对HRS和LRS的阻抗谱分析表明存在体电阻效应，这是由于薄膜中形成了多个带有氧空位的离子导电通道。实际上，通过电阻与温度测量计算电阻温度系数，进一步证实了由氧空位形成的导电通道。我们相信这些结果将有助于开发未来基于电阻开关的存储器件。
