School of Materials Science and Engineering, University of New South Wales , Sydney, 2052 New South Wales, Australia.
ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9429-34. doi: 10.1021/am403243g. Epub 2013 Sep 26.
We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.
我们报道了一种新颖而简便的方法来制备自组装的 CeO2 纳米立方体型阻变存储器件。该器件表现出优异的双极性阻变特性，高低阻比（HRS/OFF 到 LRS/ON）高达 10(4)，具有更好的均匀性和稳定性，最高可达 480 K。讨论了氧空位的存在及其作用，以解释所制备器件中的阻变现象。此外，还讨论了薄膜厚度对载流子浓度和开关（OFF/ON）比估计电场强度的影响。
