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硒化锌:碲/硒化锌硫/硫化锌纳米晶体:通向无镉纯蓝光量子点发光二极管之路。

ZnSe:Te/ZnSeS/ZnS nanocrystals: an access to cadmium-free pure-blue quantum-dot light-emitting diodes.

作者信息

Bao Zhen, Jiang Zhen-Feng, Su Qiang, Chiu Hsin-Di, Yang Heesun, Chen Shuming, Chung Ren-Jei, Liu Ru-Shi

机构信息

Department of Chemistry, National Taiwan University, Taipei 106, Taiwan.

Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 106, Taiwan.

出版信息

Nanoscale. 2020 Jun 4;12(21):11556-11561. doi: 10.1039/d0nr01019g.

DOI:10.1039/d0nr01019g
PMID:32432271
Abstract

Cadmium-free quantum dots (QDs) are attracting considerable research attention because of their low toxicity. However, the bandgap of most cadmium-free QDs avoids the pure-blue region, which leads to difficulty in realizing pure-blue quantum-dot light-emitting diodes (QLEDs). In this work, we successfully tuned the emission wavelength of ZnSe/ZnS quantum dots from the violet region (∼420 nm) to the pure-blue region (450-460 nm) by doping Te into the ZnSe core. The ZnSe:0.03Te/ZnSeS/ZnS QD sample with emission at 450 nm and a quantum yield of 30% was the most balanced formula. To overcome the energy gap between the hole-transfer layer and QD layers, a specific hole-transfer layer was developed for normal-structure QLEDs. A QLED with such a structure with ZnSe:0.03Te/ZnSeS/ZnS QDs achieved the pure-blue light emission at 455 nm, a low turn-on voltage of 4.4 V, and an external quantum efficiency of 0.33%. Overall, our cadmium-free QLED achieved pure-blue emission, revealing the potential of ZnSe-based pure-blue QLEDs for future displays.

摘要

无镉量子点(QDs)因其低毒性而备受研究关注。然而,大多数无镉量子点的带隙避开了纯蓝光区域,这导致实现纯蓝光量子点发光二极管(QLEDs)存在困难。在这项工作中,我们通过向ZnSe核中掺杂Te,成功地将ZnSe/ZnS量子点的发射波长从紫光区域(约420 nm)调至纯蓝光区域(450 - 460 nm)。发射波长为450 nm且量子产率为30%的ZnSe:0.03Te/ZnSeS/ZnS量子点样品是最平衡的配方。为了克服空穴传输层与量子点层之间的能隙,我们为常规结构的QLEDs开发了一种特定的空穴传输层。具有这种结构且采用ZnSe:0.03Te/ZnSeS/ZnS量子点的QLED实现了455 nm的纯蓝光发射、4.4 V 的低开启电压以及0.33%的外量子效率。总体而言,我们的无镉QLED实现了纯蓝光发射,揭示了基于ZnSe的纯蓝光QLED在未来显示中的潜力。

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