Li Zhancheng, Zhang Yongna, Duan Yinwu, Huang Deping, Shi Haofei
Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China.
Chongqing Engineering Research Center of Graphene Film Manufacturing, Chongqing 401329, China.
Nanomaterials (Basel). 2021 Nov 15;11(11):3069. doi: 10.3390/nano11113069.
Single-crystal Cu not only has high electrical and thermal conductivity, but can also be used as a promising platform for the epitaxial growth of two-dimensional materials. Preparing large-area single-crystal Cu foils from polycrystalline foils has emerged as the most promising technique in terms of its simplicity and effectiveness. However, the studies on transforming polycrystalline foil into large-area single-crystal foil mainly focus on the influence of annealing temperature and strain energy on the recrystallization process of copper foil, while studies on the effect of annealing atmosphere on abnormal grain growth behavior are relatively rare. It is necessary to carry out more studies on the effect of annealing atmosphere on grain growth behavior to understand the recrystallization mechanism of metal. Here, we found that introduction of ethanol in pure argon annealing atmosphere will cause the abnormal grain growth of copper foil. Moreover, the number of abnormally grown grains can be controlled by the concentration of ethanol in the annealing atmosphere. Using this technology, the number of abnormally grown grains on the copper foil can be controlled to single one. This abnormally grown grain will grow rapidly to decimeter-size by consuming the surrounding small grains. This work provides a new perspective for the understanding of the recrystallization of metals, and a new method for the preparation of large-area single-crystal copper foils.
单晶铜不仅具有高电导率和热导率,还可作为二维材料外延生长的一个有前景的平台。从多晶箔制备大面积单晶铜箔已成为最具前景的技术,因其具有简单性和有效性。然而,将多晶箔转变为大面积单晶箔的研究主要集中在退火温度和应变能对铜箔再结晶过程的影响上,而关于退火气氛对异常晶粒生长行为影响的研究相对较少。有必要对退火气氛对晶粒生长行为的影响进行更多研究,以了解金属的再结晶机制。在此,我们发现,在纯氩退火气氛中引入乙醇会导致铜箔异常晶粒生长。此外,异常生长晶粒的数量可通过退火气氛中乙醇的浓度来控制。利用该技术,可将铜箔上异常生长晶粒的数量控制为单个。这个异常生长的晶粒会通过消耗周围的小晶粒迅速生长到分米尺寸。这项工作为理解金属再结晶提供了新视角,也为制备大面积单晶铜箔提供了新方法。