Lischke Stefan, Knoll Dieter, Mai Christian, Zimmermann Lars, Peczek Anna, Kroh Marcel, Trusch Andreas, Krune Edgar, Voigt Karsten, Mai A
Opt Express. 2015 Oct 19;23(21):27213-20. doi: 10.1364/OE.23.027213.
A novel waveguide-coupled germanium p-i-n photodiode is demonstrated which combines high responsivity with very high -3 dB bandwidth at a medium dark current. Bandwidth values are 40 GHz at zero bias and more than 70 GHz at -1 V. Responsivity at 1.55 µm wavelength ranges from 0.84 A/W at zero bias to 1 A/W at -1 V. Room temperature dark current density at -1 V is about 1 A/cm2. The high responsivity mainly results from the use of a new, low-loss contact scheme, which moreover also reduces the negative effect of photo carrier diffusion on bandwidth.
展示了一种新型波导耦合锗 p-i-n 光电二极管，它在中等暗电流下将高响应度与非常高的 -3 dB 带宽相结合。零偏置时带宽值为 40 GHz，-1 V 时超过 70 GHz。1.55 µm 波长处的响应度从零偏置时的 0.84 A/W 到 -1 V 时的 1 A/W。-1 V 时的室温暗电流密度约为 1 A/cm²。高响应度主要源于采用了一种新型的低损耗接触方案，该方案还减少了光载流子扩散对带宽的负面影响。
