Spies Maria, Sadre Momtaz Zahra, Lähnemann Jonas, Anh Luong Minh, Fernandez Bruno, Fournier Thierry, Monroy Eva, I den Hertog Martien
Nanotechnology. 2020 Nov 20;31(47):472001. doi: 10.1088/1361-6528/ab99f0.
Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular object, but also the direct visualization of its modification in-situ by techniques such as Joule heating. Over the past years, we have carried out a number of studies in these fields that are reviewed in this contribution. In particular, we discuss here i) correlated studies where the same unique object is characterized electro-optically and by TEM, ii) in-situ Joule heating studies where a solid-state metal-semiconductor reaction is monitored in the TEM, and iii) in-situ biasing studies to better understand the electrical properties of contacted single nanowires. In addition, we provide detailed fabrication steps for the silicon nitride membrane-chips crucial to these correlated and in-situ measurements.
要理解半导体纳米物体的结构、组成与光电特性之间的相互作用,需要将基于透射电子显微镜(TEM)的技术与对同一试样进行的电学和光学测量相结合。TEM技术的最新进展不仅能够识别特定物体并对其进行原位电学表征,还能通过焦耳加热等技术直接原位观察其变化。在过去几年中,我们在这些领域开展了多项研究,本论文将对此进行综述。具体而言,我们在此讨论:i)对同一独特物体进行电光表征和TEM表征的相关研究;ii)在TEM中监测固态金属 - 半导体反应的原位焦耳加热研究;iii)为更好地理解接触的单根纳米线的电学特性而进行的原位偏置研究。此外,我们还提供了对这些相关原位测量至关重要的氮化硅膜芯片的详细制备步骤。