Bürger Jasmin-Clara, Gutsch Sebastian, Zacharias Margit
Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany.
Beilstein J Nanotechnol. 2020 May 28;11:843-853. doi: 10.3762/bjnano.11.69. eCollection 2020.
In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced process pressure will result in a preferred laterally aligned nanowire growth. Furthermore, increasing the volumetric flow leads to a higher species dilution. Based on our numerical results, we were able to successfully grow laterally aligned SnO nanowires out of gold film edges and gold nanoparticles on a-plane sapphire substrates. In our experiments a horizontal 2-zone tube furnace was used. The generation of Sn gas was achieved by a carbothermal reduction of SnO powder. However, we observed no elongation of the nanowire length with an increase of the process time. Nevertheless, an alternating gas exchange between an inert gas (Ar) and an oxygen-containing process atmosphere yielded an elongation of the laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange.
在本研究中，我们将模拟作为实验的指导，以便将独立纳米线生长转变为横向排列的生长模式。通过有限元模拟，我们确定更高的体积流量和更低的工艺压力将导致优先的横向排列纳米线生长。此外，增加体积流量会导致更高的物种稀释。基于我们的数值结果，我们能够在a面蓝宝石衬底上从金膜边缘和金纳米颗粒成功生长出横向排列的SnO纳米线。在我们的实验中，使用了卧式两区管式炉。通过SnO粉末的碳热还原实现Sn气体的产生。然而，我们观察到随着工艺时间的增加，纳米线长度没有延长。尽管如此，在惰性气体（Ar）和含氧工艺气氛之间进行交替气体交换，使横向排列的纳米线得以延长，这表明纳米线生长发生在气体交换的瞬态期间。
