Liu Jie, Zhou Yang, Yi Kewang, Zhang Shihai, Shao Tao, Zhang Cheng, Chu Baojin
CAS Key Laboratory of Materials for Energy Conversion and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China.
Strategic Polymer Sciences, Inc., 200 Innovation Boulevard, State College, PA 16803, USA.
Polymers (Basel). 2020 Jun 18;12(6):1370. doi: 10.3390/polym12061370.
Understanding the mechanism of dielectric breakdown is important for improving the breakdown field of a polymer. In this work, dielectric barrier discharge (DBD) treatment was applied to one surface of P(VDF-CTFE) (vinylidene fluoride-chlorotrifluoroethylene) film, and the dielectric properties of the film were studied. When the treated surface was connected to the high potential side of the power source for the breakdown test, the breakdown field of the treated film was significantly reduced compared to that of the pristine film. Based on the characterization results for the surface chemistry and morphology, it was proposed that the phenomenon was caused by the combined effects of hole injection from the metal electrode and the damage of polymer chains near the surface of the polymer film after the DBD treatment process.
了解介电击穿机制对于提高聚合物的击穿场强很重要。在这项工作中,对聚(偏二氟乙烯-三氟氯乙烯)(P(VDF-CTFE))薄膜的一个表面进行了介质阻挡放电(DBD)处理,并研究了该薄膜的介电性能。在击穿测试中,当将处理过的表面连接到电源的高电位侧时,与原始薄膜相比,处理过的薄膜的击穿场强显著降低。基于表面化学和形态的表征结果,提出该现象是由DBD处理过程后从金属电极注入空穴以及聚合物薄膜表面附近的聚合物链损伤的综合作用引起的。