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通过拓扑绝缘体异质结构中的界面工程控制自旋轨道转矩

Control of Spin-Orbit Torques by Interface Engineering in Topological Insulator Heterostructures.

作者信息

Bonell Frédéric, Goto Minori, Sauthier Guillaume, Sierra Juan F, Figueroa Adriana I, Costache Marius V, Miwa Shinji, Suzuki Yoshishige, Valenzuela Sergio O

机构信息

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain.

Graduate School of Engineering Science and Center for Spintronics Research Network (CSRN), Osaka University, Toyonaka, Osaka 560-8531, Japan.

出版信息

Nano Lett. 2020 Aug 12;20(8):5893-5899. doi: 10.1021/acs.nanolett.0c01850. Epub 2020 Jul 2.

DOI:10.1021/acs.nanolett.0c01850
PMID:32584582
Abstract

(BiSb)Te topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss. These phenomena can play a relevant role at other interfaces, such as those comprising transition metal dichalcogenides.

摘要

(BiSb)Te拓扑绝缘体(TIs)因其高电荷到自旋转换效率以及随之而来的可用于操纵铁磁体(FM)磁化的自旋轨道转矩(SOTs)而受到越来越多的关注。然而,转矩的起源仍然难以捉摸,而TI/FM界面处杂化态和强烈的材料混合的影响基本上尚未得到探索。通过结合界面化学分析和自旋转移铁磁共振(ST-FMR)测量,我们证明混合在SOTs的产生中起着关键作用。通过插入合适的普通金属间隔层,材料混合减少,界面处的TI特性得到很大改善,导致SOTs性质的强烈变化。观察到类场转矩的显著增强,其与奥斯特场转矩相反且超过奥斯特场转矩,这可归因于Rashba分裂表面带中的非平衡自旋密度以及自旋记忆损失的抑制。这些现象在其他界面(如包含过渡金属二硫属化物的界面)可能发挥重要作用。

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