Vojáček Libor, Medina Dueñas Joaquín, Li Jing, Ibrahim Fatima, Manchon Aurélien, Roche Stephan, Chshiev Mairbek, García José H
Université Grenoble Alpes, CEA, CNRS, IRIG-Spintec, 38000 Grenoble, France.
ICN2 ─ Institut Català de Nanociència i Nanotecnologia, CSIC and BIST, Bellaterra, 08193 Barcelona, Spain.
Nano Lett. 2024 Sep 25;24(38):11889-11894. doi: 10.1021/acs.nanolett.4c03029. Epub 2024 Sep 13.
We predict a very large spin-orbit torque (SOT) capability of magnetic chromium-based transition-metal dichalcogenide (TMD) monolayers in their Janus forms CrXTe, with X = S, Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of ∼100 V nm in non-Janus CrTe, completely out of experimental reach. By performing transport simulations on carefully derived Wannier tight-binding models, Janus systems are found to exhibit an SOT performance comparable to the most efficient two-dimensional materials, while additionally allowing for field-free perpendicular magnetization switching, due to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices in an ultracompact self-induced SOT scheme.
我们预测,磁性铬基过渡金属二硫属化物(TMD)单层的两面神结构CrXTe(X = S、Se)具有非常大的自旋轨道矩(SOT)能力。两面神结构所固有的结构反演对称性破缺,是由巨大的Rashba分裂产生的大SOT响应的原因,这相当于在非两面神结构的CrTe中施加约100 V nm的横向电场所获得的响应,而这完全超出了实验范围。通过在精心推导的Wannier紧束缚模型上进行输运模拟,发现两面神体系表现出与最有效的二维材料相当的SOT性能,同时由于其面内对称性降低,还允许无场垂直磁化切换。总之,我们的研究结果表明,磁性两面神TMD在超紧凑自感应SOT方案中是终极SOT-MRAM器件的合适候选材料。