Zhang Jianfa, Zhang Yiqiong, Hong Qilin, Xu Wei, Zhu Zhihong, Yuan Xiaodong
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
Nanomaterials (Basel). 2020 Jun 23;10(6):1222. doi: 10.3390/nano10061222.
Chalcogenide phase change materials enable the realization of novel, non-volatile, switchable electronic and photonic devices. In this paper, we propose a type of rewritable, non-volatile near infrared subwavelength absorber based on chalcogenide phase change materials. Our numerical simulations show that nearly perfect absorption more than 0.99 can be realized in the written state while the absorption of as-deposited or erased state is lower than 0.15 in the studied spectral range, leading to high contrast ratio of reflection more than 20 dB. Continuous tuning of the absorption spectra can be realized not only by varying the geometric parameters of the absorber but also by changing the crystallization ratio of the switched Ge 2 Sb 2 Te 5 (GST). The proposed device may find widespread applications in optical modulation, beam steering and so on.
硫族化物相变材料能够实现新型、非易失性、可切换的电子和光子器件。在本文中，我们提出了一种基于硫族化物相变材料的可重写、非易失性近红外亚波长吸收器。我们的数值模拟表明，在写入状态下可以实现超过0.99的近乎完美的吸收，而在所研究的光谱范围内，沉积态或擦除态的吸收低于0.15，从而导致超过20 dB的高反射对比度。不仅可以通过改变吸收器的几何参数，还可以通过改变切换后的Ge2Sb2Te5（GST）的结晶比来实现吸收光谱的连续调谐。所提出的器件可能在光调制、光束转向等方面有广泛的应用。
