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平面等离激元近零介电常数材料附近的态光学密度。

Optical density of states near planar ENZ materials.

作者信息

Silvestre Castro C, Méndez E R, Vial A, Lerondel G, Battie Y, Bruyant A, Vincent R

出版信息

Opt Lett. 2020 Jul 1;45(13):3593-3596. doi: 10.1364/OL.392017.

Abstract

We study the local density of optical states (LDOS) for lossy dielectric substrates whose electric permittivity has a vanishing real part, approaching zero from the positive side of the real axis. A criterion for evaluating the threshold height above (below) which radiative (non-radiative) processes dominate for a dipole emitter is established. We focus on the case of a vertical dipole above the -near-zero (ENZ) substrate and show that, in the lossless case, complete LDOS cancellation originates from radiative modes in its near field. We evaluate the performance of commercially available ENZ materials and quantify the limits of such cancellation effects with the intrinsic losses of the substrate.

摘要

我们研究了介电常数实部趋近于零(从实轴正侧趋近)的有损电介质衬底的光学态局部密度(LDOS)。建立了一个评估阈值高度的标准,高于(低于)该阈值时,偶极子发射器的辐射(非辐射)过程占主导。我们聚焦于垂直偶极子位于近零(ENZ)衬底上方的情况,并表明,在无损情况下,完全的LDOS抵消源于其近场中的辐射模式。我们评估了市售ENZ材料的性能,并通过衬底的固有损耗量化了这种抵消效应的极限。

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