Mu Zhao, Zargaleh Soroush Abbasi, von Bardeleben Hans Jürgen, Fröch Johannes E, Nonahal Milad, Cai Hongbing, Yang Xinge, Yang Jianqun, Li Xingji, Aharonovich Igor, Gao Weibo
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore.
Campus Pierre et Marie Curie, Institut des Nanosciences de Paris, Sorbonne Université, 4, place Jussieu, 75005 Paris, France.
Nano Lett. 2020 Aug 12;20(8):6142-6147. doi: 10.1021/acs.nanolett.0c02342. Epub 2020 Jul 13.
Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.
碳化硅（SiC）因其能够承载光学可寻址自旋量子比特和晶圆尺寸的样品，已成为实现可扩展量子技术的关键因素。在此，我们展示了利用共振激发的光探测磁共振（ODMR），并明确识别了4H-SiC中NV中心的基态能级。通过拉比振荡和拉姆齐振荡实现了对SiC中NV中心的相干操控。最后，我们展示了采用离子注入成功生成并表征了SiC中的单氮空位（NV）中心。我们的结果突出了SiC中NV中心作为量子信息处理潜在候选者的关键作用。
