He Zhen-Xuan, Zhou Ji-Yang, Li Qiang, Lin Wu-Xi, Liang Rui-Jian, Wang Jun-Feng, Wen Xiao-Lei, Hao Zhi-He, Liu Wei, Ren Shuo, Li Hao, You Li-Xing, Zhang Rui-Jun, Zhang Feng, Tang Jian-Shun, Xu Jin-Shi, Li Chuan-Feng, Guo Guang-Can
CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Anhui Province Key Laboratory of Quantum Network, University of Science and Technology of China, Hefei, Anhui, China.
Nat Commun. 2024 Nov 22;15(1):10146. doi: 10.1038/s41467-024-53662-y.
Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to charge variations, hampering the efficacy of spin-photon interfaces. Recent research predicted that modified divacancy color centers can stabilize their charge states, resisting photoionization. This study presents a method for precisely creating single divacancy arrays in 4H-SiC using a focused helium ion beam. Photoluminescence tests reveal consistent emission with minimal linewidth fluctuations (∼50 MHz over 3 h). By measuring the ionization rate for different polytypes of divacancies, we found that the modified divacancies are more robust against resonant excitation. Furthermore, angle-resolved photoluminescence excitation spectra unveil two resonant-transition lines with orthogonal polarizations. Enhanced optical and spin characteristics were notably observed in these color centers compared to those generated through carbon-ion and shallow implantation methods, positioning modified divacancies as promising contenders for advancing quantum networking.
碳化硅（SiC）中的色心为量子信息处理提供了令人兴奋的可能性。然而，光学操纵过程中的电离挑战会导致电荷变化，从而阻碍自旋 - 光子界面的效能。最近的研究预测，经过修饰的双空位色心可以稳定其电荷状态，抵抗光电离。本研究提出了一种使用聚焦氦离子束在4H - SiC中精确创建单双空位阵列的方法。光致发光测试显示发射一致，线宽波动极小（3小时内约50 MHz）。通过测量不同多型双空位的电离率，我们发现经过修饰的双空位对共振激发更具抗性。此外，角分辨光致发光激发光谱揭示了两条具有正交偏振的共振跃迁线。与通过碳离子和浅注入方法产生的色心相比，这些色心的光学和自旋特性得到了显著增强，这使得经过修饰的双空位成为推进量子网络的有前途的候选者。
