低密度种子量子点上生长的单个大尺寸砷化铟量子点的电信波长波段单光子发射

Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

作者信息

Chen Ze-Sheng, Ma Ben, Shang Xiang-Jun, He Yu, Zhang Li-Chun, Ni Hai-Qiao, Wang Jin-Liang, Niu Zhi-Chuan

机构信息

School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191, China.

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China.

出版信息

Nanoscale Res Lett. 2016 Dec;11(1):382. doi: 10.1186/s11671-016-1597-0. Epub 2016 Aug 30.

DOI:10.1186/s11671-016-1597-0

PMID:27576522

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5005251/

Abstract

Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for 1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.51.6 ns. The second-order correlation function of g (2)(0) < 0.5 which demonstrates a pure single-photon emission.

摘要

利用嵌入在砷化镓衬底上的平面微腔中的自组装应变耦合双层砷化铟量子点，实现了电信波长波段的单光子发射。通过精确控制铟沉积量并在两个量子点层中施加梯度铟通量，制备了上层中用于约1.3μm发射的低密度大尺寸量子点。时间分辨光致发光（PL）强度表明，其激子发射的辐射寿命为1.5~1.6纳秒。二阶关联函数g(2)(0) < 0.5，表明为纯单光子发射。