Chu Yen-Lin, Young Sheng-Joue, Ji Liang-Wen, Tang I-Tseng, Chu Tung-Te
Department of Electro-Optical Engineering & Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan.
Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan.
Sensors (Basel). 2020 Jul 10;20(14):3861. doi: 10.3390/s20143861.
In this paper, 100 nm-thick zinc oxide (ZnO) films were deposited as a seed layer on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique, and vertical well-aligned Fe-doped ZnO (FZO) nanorod (NR) arrays were then grown on the seed layer-coated substrates via a low-temperature solution method. FZO NR arrays were annealed at 600 °C and characterized by using field emission scanning microscopy (FE-SEM) and X-ray diffraction spectrum (XRD) analysis. FZO NRs grew along the preferred (002) orientation with good crystal quality and hexagonal wurtzite structure. The main ultraviolet (UV) peak of 378 nm exhibited a red-shifted phenomenon with Fe-doping by photoluminescence (PL) emission. Furthermore, FZO photodetectors (PDs) based on metal-semiconductor-metal (MSM) structure were successfully manufactured through a photolithography procedure for UV detection. Results revealed that compared with pure ZnO NRs, FZO NRs exhibited a remarkable photosensitivity for UV PD applications and a fast rise/decay time. The sensitivities of prepared pure ZnO and FZO PDs were 43.1, and 471.1 for a 3 V applied bias and 380 nm UV illumination, respectively.
在本文中,通过射频(RF)磁控溅射技术在康宁玻璃基板上沉积100纳米厚的氧化锌(ZnO)薄膜作为籽晶层,然后通过低温溶液法在涂覆有籽晶层的基板上生长垂直取向良好的铁掺杂氧化锌(FZO)纳米棒(NR)阵列。FZO NR阵列在600℃下退火,并通过场发射扫描显微镜(FE-SEM)和X射线衍射光谱(XRD)分析进行表征。FZO NR沿择优(002)取向生长,具有良好的晶体质量和六方纤锌矿结构。通过光致发光(PL)发射,378纳米的主要紫外(UV)峰随着铁掺杂出现红移现象。此外,通过光刻工艺成功制造了基于金属-半导体-金属(MSM)结构的FZO光电探测器(PD)用于紫外检测。结果表明,与纯ZnO NR相比,FZO NR在紫外PD应用中表现出显著的光敏性和快速的上升/下降时间。对于施加3V偏压和380纳米紫外光照,制备的纯ZnO和FZO PD的灵敏度分别为43.1和471.1。