Liao Ming-Yun, Chiang Yun-Chi, Chen Chiung-Han, Chen Wen-Chang, Chueh Chu-Chen
Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan.
Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36398-36408. doi: 10.1021/acsami.0c10587. Epub 2020 Jul 31.
The rapid development of Internet of Things and big data has made the conventional storage devices face the need of reforming. Rather than using electrical pulses to store data in one of two states, photomemory exploiting optical stimulation to store light information emerges as a revolutionary candidate for the optoelectronic community. However, fully optically driven photomemory with fast data transmission speed and outstanding energy saving capability suffers from less exploration. Herein, a transistor-type photomemory using a 2D CsPb(SCN)Br/polymer hybrid floating gate is explored and three host polymers, polystyrene, poly(4-vinylphenol), and poly(vinylpyrrolidone) (PVP), are investigated to understand the relationship between polymer matrix selection and memory performance. All devices show a photoinduced recovery memory behavior but with two distinctly different photomemory behaviors. In addition to the demonstration of a regular nonvolatile photomemory showing a high on/off ratio of >10 over 10 s, an unusual fully optically driven memory behavior is intriguingly accomplished in the CsPb(SCN)Br/PVP photomemory. Using white light as the driver of programming and a blue laser as the main performer of erasing, this device can be switched between two distinguishable states and possesses acceptable data discriminability, as evidenced by its fully optically driven writing (programing)-reading-erasing-reading switching function that shows an on/off current ratio of 10. This study not only presents the first 2D perovskite-based photomemory but also shows a novel fully optically driven memory that has been rarely reported in the literature.
物联网和大数据的快速发展使得传统存储设备面临改革的需求。光存储器利用光刺激来存储光信息，而不是使用电脉冲将数据存储在两种状态之一，它已成为光电子领域的一个革命性候选者。然而，具有快速数据传输速度和出色节能能力的全光驱动光存储器的研究较少。在此，我们探索了一种使用二维CsPb(SCN)Br/聚合物混合浮栅的晶体管型光存储器，并研究了三种主体聚合物，即聚苯乙烯、聚(4-乙烯基苯酚)和聚乙烯吡咯烷酮(PVP)，以了解聚合物基体选择与存储性能之间的关系。所有器件均表现出光诱导恢复记忆行为，但具有两种明显不同的光存储行为。除了展示一种常规的非易失性光存储器，其在10 s内的开/关比大于10之外，在CsPb(SCN)Br/PVP光存储器中还有趣地实现了一种不寻常的全光驱动存储行为。使用白光作为编程驱动源，蓝光激光作为擦除的主要执行源，该器件可以在两种可区分的状态之间切换，并具有可接受的数据可区分性，其全光驱动的写入(编程)-读取-擦除-读取切换功能的开/关电流比为10，证明了这一点。这项研究不仅展示了首个基于二维钙钛矿的光存储器，还展示了一种文献中很少报道的新型全光驱动存储器。
