Jin Risheng, Wang Jin, Shi Keli, Qiu Beibei, Ma Lanchao, Huang Shihua, Li Zhengquan
College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
RSC Adv. 2020 Nov 27;10(70):43225-43232. doi: 10.1039/d0ra08021g. eCollection 2020 Nov 23.
Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron-hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising a floating-gate of IHP QDs embedded in a polystyrene matrix. Notably, the FGOFETM exhibits photoinduced-reset characteristic that allows data removal by photo irradiation. This feature makes low energy-consuming memory and innovative devices possible. The nonvolatile devices also show a large memory window (≈90 V), ultrahigh memory on/off ratio (over 10) and therefore excellent multilevel information storage, in which 4 recognizable non-volatile states and long retention time (up to 10 years) are obtained. This work not only offers an effective guideline of high-performance FGOFETMs, but also shows great potential to realize multilevel data storage under electrical programming and photoinduced-reset processes.
无机卤化物钙钛矿量子点（IHP QDs）因其尺寸依赖的可调带隙、长的电子-空穴扩散长度和优异的吸收特性，在光电器件中得到了广泛研究。在此，展示了一种新型的浮栅有机场效应晶体管存储器（FGOFETM），它由嵌入聚苯乙烯基质中的IHP QDs浮栅组成。值得注意的是，FGOFETM表现出光致复位特性，允许通过光照射来擦除数据。这一特性使得低能耗存储器和创新器件成为可能。该非易失性器件还显示出大的存储窗口（约90 V）、超高的存储开/关比（超过10），因此具有优异的多级信息存储能力，其中获得了4种可识别的非易失性状态和长的保持时间（长达10年）。这项工作不仅为高性能FGOFETM提供了有效的指导方针，而且在电编程和光致复位过程下实现多级数据存储方面也显示出巨大潜力。
