Università degli Studi della Calabria, Dipartimento di Fisica, 87036 Rende, Italy.
Nanoscale. 2016 Apr 28;8(16):8474-9. doi: 10.1039/c6nr01262k. Epub 2016 Apr 6.
We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O2, N2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.
我们证明，与大多数二维材料不同，超薄的 InSe 薄片在环境条件下是稳定的。尽管具有环境稳定性，但基于 InSe 的纳米器件表现出环境 p 型掺杂，这种掺杂被用六方氮化硼覆盖 InSe 所抑制。通过传输实验、密度泛函理论和振动光谱学，我们将在环境气氛下未覆盖 InSe 中假定的 p 型掺杂归因于 Se 空位处的水分解。我们已经估计了 O2、N2、H2O、CO 和 CO2 在 InSe 上的位依赖吸附能。只有在 H2O 的情况下才发现稳定的吸附，每个水分子的电荷转移仅为 0.01 个电子。
