• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

通过量子限域来调节剥离的 InSe 纳米片的带隙。

Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

机构信息

School of Physics and AstronomyThe University of Nottingham, Nottingham, NG7 2RD, UK.

出版信息

Adv Mater. 2013 Oct 25;25(40):5714-8. doi: 10.1002/adma.201302616. Epub 2013 Aug 21.

DOI:10.1002/adma.201302616
PMID:23966225
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4065344/
Abstract

Strong quantization effects and tuneable near-infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ-rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.

摘要

本文报道了机械剥离的γ-菱形半导体 InSe 晶体中存在的强量子限制效应和可调谐的近红外光致发光发射。InSe 纳米片的光学性质与最近报道的剥离过渡金属二卤化物的性质明显不同，表明当 InSe 薄片厚度减小到几纳米时，半导体从直接带隙转变为间接带隙。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/bf1d72b0643a/adma0025-5714-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/73e4d95abcc9/adma0025-5714-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/69ac26eddbb0/adma0025-5714-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/ec84073028eb/adma0025-5714-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/bf1d72b0643a/adma0025-5714-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/73e4d95abcc9/adma0025-5714-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/69ac26eddbb0/adma0025-5714-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/ec84073028eb/adma0025-5714-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a24/4065344/bf1d72b0643a/adma0025-5714-f4.jpg

相似文献

1
Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.通过量子限域来调节剥离的 InSe 纳米片的带隙。
Adv Mater. 2013 Oct 25;25(40):5714-8. doi: 10.1002/adma.201302616. Epub 2013 Aug 21.
2
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.二维范德瓦尔斯硒化铟晶体中的直接-间接带隙交叉。
Sci Rep. 2016 Dec 23;6:39619. doi: 10.1038/srep39619.
3
Surface-Modified Ultrathin InSe Nanosheets with Enhanced Stability and Photoluminescence for High-Performance Optoelectronics.具有增强稳定性和光致发光性能的表面改性超薄InSe纳米片用于高性能光电器件
ACS Nano. 2020 Sep 22;14(9):11373-11382. doi: 10.1021/acsnano.0c03556. Epub 2020 Aug 27.
4
Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy.角分辨光电子能谱揭示二维InSe中的间接到直接能隙交叉
ACS Nano. 2019 Feb 26;13(2):2136-2142. doi: 10.1021/acsnano.8b08726. Epub 2019 Jan 28.
5
Engineering Near-Infrared Light Emission in Mechanically Exfoliated InSe Platelets through Hydrostatic Pressure for Multicolor Microlasing.通过静水压力在机械剥离的InSe薄片中实现近红外光发射用于多色微激光
Nano Lett. 2022 May 11;22(9):3840-3847. doi: 10.1021/acs.nanolett.2c01127. Epub 2022 May 2.
6
Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures.基于 InSe 的范德瓦尔斯异质结构中的栅极定义量子限制。
Nano Lett. 2018 Jun 13;18(6):3950-3955. doi: 10.1021/acs.nanolett.8b01376. Epub 2018 May 21.
7
Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation.通过种子层原子层沉积封装抑制剥离铟硒纳米片器件的环境降解
Nano Lett. 2018 Dec 12;18(12):7876-7882. doi: 10.1021/acs.nanolett.8b03689. Epub 2018 Nov 16.
8
The Interaction of Hydrogen with the van der Waals Crystal -InSe.氢与范德华晶体 -InSe 的相互作用。
Molecules. 2020 May 28;25(11):2526. doi: 10.3390/molecules25112526.
9
Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes.二维 InSe 薄片脊上的增强发光。
Nano Lett. 2018 Aug 8;18(8):5078-5084. doi: 10.1021/acs.nanolett.8b01940. Epub 2018 Jul 23.
10
Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas.具有自形成二维电子气的InSe超薄膜的应变诱导带隙增强
ACS Nano. 2021 Jun 22;15(6):10700-10709. doi: 10.1021/acsnano.1c03724. Epub 2021 Jun 3.

引用本文的文献

1
Brightening dark excitons and trions in systems with a Mexican-hat energy dispersion: example of InSe.在具有墨西哥帽能量色散的系统中增强暗激子和三重态激子：以硒化铟为例。
NPJ 2D Mater Appl. 2025;9(1):63. doi: 10.1038/s41699-025-00570-4. Epub 2025 Jul 21.
2
Emergent 2D van der Waals materials photonic sources.二维范德华材料的紧急光子源。
Nanophotonics. 2025 Mar 11;14(10):1475-1507. doi: 10.1515/nanoph-2024-0702. eCollection 2025 May.
3
Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study.

本文引用的文献

1
Nonvolatile memory cells based on MoS2/graphene heterostructures.基于 MoS2/石墨烯异质结构的非易失性存储单元。
ACS Nano. 2013 Apr 23;7(4):3246-52. doi: 10.1021/nn3059136. Epub 2013 Mar 19.
2
Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂.单层二硫化钼、二硒化钼和二硒化钨的光致发光发射与拉曼响应。
Opt Express. 2013 Feb 25;21(4):4908-16. doi: 10.1364/OE.21.004908.
3
Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics.基于石墨烯-WS2 异质结构的垂直场效应晶体管，用于柔性透明电子学。
用于先进光电探测器的InSe的掺杂特性与能带工程：一项密度泛函理论研究
Nanomaterials (Basel). 2025 May 10;15(10):720. doi: 10.3390/nano15100720.
4
Recent Advances in Field-Effect Transistor-Based Biosensors for Label-Free Detection of SARS-CoV-2.基于场效应晶体管的SARS-CoV-2无标记检测生物传感器的最新进展
Small Sci. 2023 Dec 21;4(2):2300058. doi: 10.1002/smsc.202300058. eCollection 2024 Feb.
5
Giant Light Emission Enhancement in Strain-Engineered InSe/MS (M = Mo or W) van der Waals Heterostructures.应变工程InSe/MS（M = Mo或W）范德华异质结构中的巨光发射增强
Nano Lett. 2025 Mar 5;25(9):3375-3382. doi: 10.1021/acs.nanolett.4c04252. Epub 2025 Feb 5.
6
Band structure and magnetism engineering of InSe monolayers through doping with IVA- and VA-group atoms: role of impurities.通过IVA族和VA族原子掺杂实现InSe单层的能带结构和磁性工程：杂质的作用
Nanoscale Adv. 2025 Jan 23;7(5):1443-1451. doi: 10.1039/d4na01013b. eCollection 2025 Feb 25.
7
Miniaturized spectral sensing with a tunable optoelectronic interface.具有可调谐光电接口的小型化光谱传感
Sci Adv. 2025 Jan 24;11(4):eado6886. doi: 10.1126/sciadv.ado6886. Epub 2025 Jan 22.
8
Tunable band alignment and large power conversion efficiency in a two-dimensional InS/ZnInS heterostructure.二维InS/ZnInS异质结构中的可调谐能带对准和高功率转换效率
RSC Adv. 2024 Dec 23;14(54):40077-40085. doi: 10.1039/d4ra06901c. eCollection 2024 Dec 17.
9
Controlled tuning of HOMO and LUMO levels in supramolecular nano-Saturn complexes.超分子纳米土星配合物中最高占据分子轨道（HOMO）和最低未占据分子轨道（LUMO）能级的可控调节
RSC Adv. 2024 Dec 12;14(53):39395-39407. doi: 10.1039/d4ra07068b. eCollection 2024 Dec 10.
10
Colloidal stabilization of hydrophobic InSe 2D nanosheets in a model environmental aqueous solution and their impact on MR-1.模型环境水溶液中疏水InSe二维纳米片的胶体稳定及其对MR-1的影响
Environ Sci Nano. 2024 Feb 1;11(2):627-636. doi: 10.1039/d3en00382e. Epub 2023 Oct 31.
Nat Nanotechnol. 2013 Feb;8(2):100-3. doi: 10.1038/nnano.2012.224. Epub 2012 Dec 23.
4
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.二维过渡金属二卤族化合物的电子学和光电学。
Nat Nanotechnol. 2012 Nov;7(11):699-712. doi: 10.1038/nnano.2012.193.
5
Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.二维半导体中从间接带隙到直接带隙的热致转变：MoSe2 与 MoS2 的对比。
Nano Lett. 2012 Nov 14;12(11):5576-80. doi: 10.1021/nl302584w. Epub 2012 Oct 29.
6
MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.具有厚度调制光学能隙的 MoS₂ 纳米片光晶体管。
Nano Lett. 2012 Jul 11;12(7):3695-700. doi: 10.1021/nl301485q. Epub 2012 Jun 13.
7
Synthesis of few-layer GaSe nanosheets for high performance photodetectors.用于高性能光探测器的少层 GaSe 纳米片的合成。
ACS Nano. 2012 Jul 24;6(7):5988-94. doi: 10.1021/nn300889c. Epub 2012 Jun 7.
8
Field-effect tunneling transistor based on vertical graphene heterostructures.基于垂直石墨烯异质结构的场效应隧穿晶体管。
Science. 2012 Feb 24;335(6071):947-50. doi: 10.1126/science.1218461. Epub 2012 Feb 2.
9
Two-dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks.二维介电纳米片：源自纳米晶体构筑基元的新型纳电子学
Adv Mater. 2012 Jan 10;24(2):210-28. doi: 10.1002/adma.201103241. Epub 2011 Oct 14.
10
Atomically thin MoS₂: a new direct-gap semiconductor.原子级薄的 MoS₂：一种新型直接带隙半导体。
Phys Rev Lett. 2010 Sep 24;105(13):136805. doi: 10.1103/PhysRevLett.105.136805.