Wu Sijie, Liang Chengyu, Zhang Jiaxu, Wu Zhou, Wang Xiao-Li, Zhou Rui, Wang Yaxing, Wang Shuao, Li Dong-Sheng, Wu Tao
College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China.
State Key Laboratory of Radiation Medicine and Protection School for Radiological and interdisciplinary Science (RAD-X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University, Suzhou, Jiangsu, 215123, China.
Angew Chem Int Ed Engl. 2020 Oct 12;59(42):18605-18610. doi: 10.1002/anie.202010290. Epub 2020 Sep 11.
A wide range of tunability in the physical parameters of a semiconductor used for X-ray detection is desirable to achieve targeted performance optimization. However, in a dense-phase semiconductor, fine-tuning one parameter often leads to unwanted changes in other parameters. Herein, the intrinsic openness in an open-framework semiconductor has been confirmed, for the first time, to be a key structural factor that weakens the mutual exclusivity of the adjustable physical parameters owing to a non-linear control mechanism. The controllable doping of S in a zeolitic In-Se host results in an optimal balance between resistivity, band gap, and carrier mobility, which finally results in an excellent X-ray detector with a high figure of merit for the mobility-lifetime product (7.12×10 cm V ); this value is superior to that of a commercial α-Se detector. The current strategy of choosing open-framework semiconductor materials opens a new window for targeting high-performance X-ray detection.
为了实现目标性能优化，用于X射线检测的半导体物理参数需要具有广泛的可调性。然而，在密相半导体中，微调一个参数往往会导致其他参数出现不必要的变化。在此，首次证实开放框架半导体中的固有开放性是一个关键结构因素，由于非线性控制机制，它削弱了可调物理参数之间的相互排斥性。在沸石型In-Se主体中对S进行可控掺杂，可在电阻率、带隙和载流子迁移率之间实现最佳平衡，最终得到具有优异迁移率-寿命乘积优值（7.12×10⁻³ cm² V⁻¹）的X射线探测器；该值优于商用α-Se探测器。目前选择开放框架半导体材料的策略为实现高性能X射线检测打开了一扇新窗口。
