• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

在多晶金刚石衬底上生长的κ-GaO薄膜的结构和光电子特性

Structural and Photoelectronic Properties of κ-GaO Thin Films Grown on Polycrystalline Diamond Substrates.

作者信息

Girolami Marco, Bosi Matteo, Pettinato Sara, Ferrari Claudio, Lolli Riccardo, Seravalli Luca, Serpente Valerio, Mastellone Matteo, Trucchi Daniele M, Fornari Roberto

机构信息

Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche (ISM-CNR), Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010 Roma, Italy.

Istituto dei Materiali per l'Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche (IMEM-CNR), Parco Area delle Scienze 37/A, 43124 Parma, Italy.

出版信息

Materials (Basel). 2024 Jan 22;17(2):519. doi: 10.3390/ma17020519.

DOI:10.3390/ma17020519
PMID:38276458
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10820879/
Abstract

Orthorhombic κ-GaO thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-GaO epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This paves the way for the future development of novel hybrid architectures for UV and ionizing radiation detection, exploiting the unique features of gallium oxide and diamond as wide-bandgap semiconductors.

摘要

通过金属有机气相外延法，首次在多晶金刚石自支撑衬底上于650°C的温度下生长出正交晶系κ-GaO薄膜。分别通过光学显微镜、X射线衍射、电流-电压测量和光谱光电导性对所得异质结构的结构、形态、电学和光电子特性进行了评估。结果表明，在生长过程结束后不久，在受控的氦气流下于低压（100毫巴）下进行非常缓慢的冷却，对于提高κ-GaO外延薄膜的质量是必不可少的，这能确保与金刚石衬底有良好的附着力、最佳的形态以及更低密度的电活性缺陷。这为利用氧化镓和金刚石作为宽带隙半导体的独特特性，开发用于紫外线和电离辐射检测的新型混合架构铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/70fe51c19b9d/materials-17-00519-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/38715cc8998d/materials-17-00519-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/e47d08ff4d2b/materials-17-00519-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/3cb50c1387dc/materials-17-00519-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/aa7d4e2bb60e/materials-17-00519-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/e1d3e0f95f4d/materials-17-00519-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/741029ea4d23/materials-17-00519-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/70fe51c19b9d/materials-17-00519-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/38715cc8998d/materials-17-00519-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/e47d08ff4d2b/materials-17-00519-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/3cb50c1387dc/materials-17-00519-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/aa7d4e2bb60e/materials-17-00519-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/e1d3e0f95f4d/materials-17-00519-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/741029ea4d23/materials-17-00519-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b77/10820879/70fe51c19b9d/materials-17-00519-g007.jpg

相似文献

1
Structural and Photoelectronic Properties of κ-GaO Thin Films Grown on Polycrystalline Diamond Substrates.在多晶金刚石衬底上生长的κ-GaO薄膜的结构和光电子特性
Materials (Basel). 2024 Jan 22;17(2):519. doi: 10.3390/ma17020519.
2
Thermal Conductivity of β-Phase GaO and (AlGa)O Heteroepitaxial Thin Films.β相GaO和(AlGa)O异质外延薄膜的热导率
ACS Appl Mater Interfaces. 2021 Aug 18;13(32):38477-38490. doi: 10.1021/acsami.1c08506. Epub 2021 Aug 9.
3
Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition.通过原子层沉积实现的低热预算异质外延氧化镓薄膜
ACS Appl Mater Interfaces. 2020 Sep 30;12(39):44225-44237. doi: 10.1021/acsami.0c08477. Epub 2020 Sep 15.
4
Structure and Thermal Stability of ε/κ-GaO Films Deposited by Liquid-Injection MOCVD.通过液体注入金属有机化学气相沉积法沉积的ε/κ-GaO薄膜的结构与热稳定性
Materials (Basel). 2022 Dec 20;16(1):20. doi: 10.3390/ma16010020.
5
Epitaxial Growth of GaO: A Review.《氧化镓的外延生长：综述》
Materials (Basel). 2024 Aug 28;17(17):4261. doi: 10.3390/ma17174261.
6
Reduction of dislocations in α-GaO epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate.通过卤化物气相外延生长在截头圆锥图案蓝宝石衬底上的α-GaO外延层中位错的减少。
IUCrJ. 2021 Apr 28;8(Pt 3):462-467. doi: 10.1107/S2052252521003389. eCollection 2021 May 1.
7
Low-Temperature As-Grown Crystalline β-GaO Films via Plasma-Enhanced Atomic Layer Deposition.通过等离子体增强原子层沉积法制备的低温生长晶体β-GaO薄膜。
ACS Appl Mater Interfaces. 2021 Feb 24;13(7):8538-8551. doi: 10.1021/acsami.0c21128. Epub 2021 Feb 10.
8
Electrical and Recombination Properties of Polar Orthorhombic κ-GaO Films Prepared by Halide Vapor Phase Epitaxy.通过卤化物气相外延法制备的极性正交κ-GaO薄膜的电学和复合特性
Nanomaterials (Basel). 2023 Mar 29;13(7):1214. doi: 10.3390/nano13071214.
9
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (GaO) Thin Films.拉曼光谱作为评估氧化镓（GaO）薄膜结构质量和多晶型性的有效工具。
Appl Spectrosc. 2024 Dec;78(12):1307-1315. doi: 10.1177/00037028241267925. Epub 2024 Aug 2.
10
Single-Domain and Atomically Flat Surface of κ-GaO Thin Films on FZ-Grown ε-GaFeO Substrates via Step-Flow Growth Mode.通过台阶流生长模式在区熔生长的ε-GaFeO衬底上制备的κ-GaO薄膜的单畴和原子级平整表面。
ACS Omega. 2020 Nov 4;5(45):29585-29592. doi: 10.1021/acsomega.0c04634. eCollection 2020 Nov 17.

引用本文的文献

1
Van der Waals β-GaO thin films on polycrystalline diamond substrates.多晶金刚石衬底上的范德华β-GaO薄膜。
Nat Commun. 2025 Aug 31;16(1):8144. doi: 10.1038/s41467-025-63666-x.
2
Thermodynamics of GaO Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition.通过金属有机化学气相沉积法实现的GaO异质外延和材料生长的热力学
ACS Appl Electron Mater. 2024 Jun 21;6(7):5021-5028. doi: 10.1021/acsaelm.4c00535. eCollection 2024 Jul 23.
3
A Review of β-GaO Power Diodes.β-GaO功率二极管综述。

本文引用的文献

1
Epitaxial Growth of (-201) β-GaO on (001) Diamond Substrates.（-201）β-GaO在（001）金刚石衬底上的外延生长。
Cryst Growth Des. 2023 Oct 16;23(11):8290-8295. doi: 10.1021/acs.cgd.3c00972. eCollection 2023 Nov 1.
2
X-ray Detectors Based on GaO Microwires.基于氧化镓微丝的X射线探测器。
Materials (Basel). 2023 Jun 30;16(13):4742. doi: 10.3390/ma16134742.
3
Electronic, Thermal, and Thermoelectric Transport Properties of ε-GaO from First Principles.基于第一性原理的ε-GaO的电子、热和热电输运性质
Materials (Basel). 2024 Apr 18;17(8):1870. doi: 10.3390/ma17081870.
ACS Omega. 2022 Mar 31;7(14):11643-11653. doi: 10.1021/acsomega.1c06367. eCollection 2022 Apr 12.
4
A Diamond-Based Dose-per-Pulse X-ray Detector for Radiation Therapy.一种用于放射治疗的基于金刚石的单脉冲剂量X射线探测器。
Materials (Basel). 2021 Sep 10;14(18):5203. doi: 10.3390/ma14185203.
5
A Photoconductive X-ray Detector with a High Figure of Merit Based on an Open-Framework Chalcogenide Semiconductor.基于开放框架硫族化物半导体的具有高优值的光电导X射线探测器。
Angew Chem Int Ed Engl. 2020 Oct 12;59(42):18605-18610. doi: 10.1002/anie.202010290. Epub 2020 Sep 11.
6
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications.一种新型单晶体管动态随机存取存储器（1T DRAM），其具有部分插入的宽带隙双势垒，适用于高温应用。
Micromachines (Basel). 2018 Nov 7;9(11):581. doi: 10.3390/mi9110581.