Bonnet Roméo, Martin Pascal, Suffit Stéphan, Lafarge Philippe, Lherbier Aurélien, Charlier Jean-Christophe, Della Rocca Maria Luisa, Barraud Clément
Université de Paris, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162, 75013 Paris, France.
Université de Paris, ITODYS, CNRS, UMR 7086, 75013 Paris, France.
Sci Adv. 2020 Jul 31;6(31):eaba5494. doi: 10.1126/sciadv.aba5494. eCollection 2020 Jul.
Transporting quantum information such as the spin information over micrometric or even millimetric distances is a strong requirement for the next-generation electronic circuits such as low-voltage spin-logic devices. This crucial step of transportation remains delicate in nontopologically protected systems because of the volatile nature of spin states. Here, a beneficial combination of different phenomena is used to approach this sought-after milestone for the beyond-Complementary Metal Oxide Semiconductor (CMOS) technology roadmap. First, a strongly spin-polarized charge current is injected using highly spin-polarized hybridized states emerging at the complex ferromagnetic metal/molecule interfaces. Second, the spin information is brought toward the conducting inner shells of a multiwall carbon nanotube used as a confined nanoguide benefiting from both weak spin-orbit and hyperfine interactions. The spin information is finally electrically converted because of a strong magnetoresistive effect. The experimental results are also supported by calculations qualitatively revealing exceptional spin transport properties of this system.
对于诸如低压自旋逻辑器件等下一代电子电路而言,在微米甚至毫米距离上传输量子信息(如自旋信息)是一项迫切需求。由于自旋态的易逝性,在非拓扑保护系统中,这一关键的传输步骤仍然十分棘手。在此,利用不同现象的有益组合,朝着超越互补金属氧化物半导体(CMOS)技术路线图的这一备受期待的里程碑迈进。首先,利用在复杂铁磁金属/分子界面出现的高度自旋极化的杂化态注入强自旋极化的电荷电流。其次,受益于弱自旋轨道和超精细相互作用,自旋信息被带向用作受限纳米通道的多壁碳纳米管的导电内壳层。由于强磁阻效应,自旋信息最终被电转换。计算结果也定性地揭示了该系统卓越的自旋传输特性,从而支持了实验结果。