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硼掺杂可调带隙和增强表面等离子体共振的还原氧化石墨烯。

Boron-Doped Reduced Graphene Oxide with Tunable Bandgap and Enhanced Surface Plasmon Resonance.

机构信息

Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia.

Department of Electronic Engineering, Balochistan University of Information Technology, Engineering, and Management Sciences, Quetta 87300, Balochistan, Pakistan.

出版信息

Molecules. 2020 Aug 11;25(16):3646. doi: 10.3390/molecules25163646.

DOI:10.3390/molecules25163646
PMID:32796504
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7465222/
Abstract

Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems. Boron doping enhances the conductivity of graphene oxide and creates several defect sites during the reduction process, which can play a vital role in achieving high-sensing performance of light-sensing devices. Initially, the B-rGO is synthesized using a modified microwave-assisted hydrothermal method and later analyzed using standard FESEM, FTIR, XPS, Raman, and XRD techniques. The content of boron in doped rGO was found to be 6.51 at.%. The B-rGO showed a tunable optical bandgap from 2.91 to 3.05 eV in the visible spectrum with an electrical conductivity of 0.816 S/cm. The optical constants obtained from UV-Vis absorption spectra suggested an enhanced surface plasmon resonance (SPR) response for B-rGO in the theoretical study, which was further verified by experimental investigations. The B-rGO with tunable bandgap and enhanced SPR could open up the solution for future high-performance optoelectronic and sensing applications.

摘要

石墨烯及其杂化材料由于其高光学和电子性能,被用作光感测器件的潜在材料。然而,石墨烯中不存在带隙限制了高性能器件的实现。在这项工作中,提出了硼掺杂还原氧化石墨烯(B-rGO)来克服上述问题。硼掺杂增强了氧化石墨烯的导电性,并在还原过程中产生了几个缺陷位,这在实现光感测器件的高感测性能方面起着至关重要的作用。首先,使用改进的微波辅助水热法合成了 B-rGO,然后使用标准的 FESEM、FTIR、XPS、拉曼和 XRD 技术进行了分析。掺杂 rGO 中的硼含量被发现为 6.51 原子%。B-rGO 在可见光谱范围内的光学带隙从 2.91 到 3.05 eV 可调,电导率为 0.816 S/cm。从紫外-可见吸收光谱获得的光学常数表明,理论研究中 B-rGO 具有增强的表面等离子体共振(SPR)响应,实验研究进一步验证了这一点。具有可调带隙和增强 SPR 的 B-rGO 为未来的高性能光电和传感应用开辟了解决方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/287b8de2a5df/molecules-25-03646-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/aec36d1f2458/molecules-25-03646-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/36440fb07714/molecules-25-03646-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/9a6a39cf31d9/molecules-25-03646-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/dec350ef6369/molecules-25-03646-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/58335c9419e4/molecules-25-03646-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/fd00d3b4586f/molecules-25-03646-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/c1860906def2/molecules-25-03646-sch001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/287b8de2a5df/molecules-25-03646-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/aec36d1f2458/molecules-25-03646-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/36440fb07714/molecules-25-03646-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/9a6a39cf31d9/molecules-25-03646-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/dec350ef6369/molecules-25-03646-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/58335c9419e4/molecules-25-03646-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/fd00d3b4586f/molecules-25-03646-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/c1860906def2/molecules-25-03646-sch001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1910/7465222/287b8de2a5df/molecules-25-03646-g007.jpg

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