Qin Jing-Kai, Zhou Feichi, Wang Jingli, Chen Jiewei, Wang Cong, Guo Xuyun, Zhao Shouxin, Pei Yi, Zhen Liang, Ye Peide D, Lau Shu Ping, Zhu Ye, Xu Cheng-Yan, Chai Yang
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China.
School of Materials Science and Engineering, Harbin Institute of Technology (Shen Zhen), Shen Zhen 518055, People's Republic of China.
ACS Nano. 2020 Aug 25;14(8):10018-10026. doi: 10.1021/acsnano.0c03124. Epub 2020 Aug 7.
Hardware implementation of an artificial neural network requires neuromorphic devices to process information with low energy consumption and high heterogeneity. Here we demonstrate an electrolyte-gated synaptic transistor (EGT) based on a trigonal selenium (-Se) nanosheet. Due to the intrinsic low conductivity of the Se channel, the -Se synaptic transistor exhibits ultralow energy consumption, less than 0.1 pJ per spike. More importantly, the intrinsic low symmetry of -Se offers a strong anisotropy along its - and -axis in electrical conductance with a ratio of up to 8.6. The multiterminal EGT device exhibits an anisotropic response of filtering behavior to the same external stimulus, which enables it to mimic the heterogeneous signal transmission process of the axon-multisynapse biostructure in the human brain. The proof-of-concept device in this work represents an important step to develop neuromorphic electronics for processing complex signals.
人工神经网络的硬件实现需要神经形态器件以低能耗和高异质性来处理信息。在此,我们展示了一种基于三角硒(-Se)纳米片的电解质门控突触晶体管(EGT)。由于Se沟道固有的低电导率,-Se突触晶体管表现出超低能耗,每个尖峰能耗小于0.1 pJ。更重要的是,-Se固有的低对称性在其电导方面沿其-轴和-轴提供了强烈的各向异性,比率高达8.6。多端EGT器件对相同外部刺激表现出滤波行为的各向异性响应,这使其能够模拟人脑中轴突-多突触生物结构的异质信号传输过程。这项工作中的概念验证器件是开发用于处理复杂信号的神经形态电子学的重要一步。