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RSi及RSi硅化物中的结构变化。第二部分。结构驱动因素。

Structure variations within RSi and RSi silicides. Part II. Structure driving factors.

作者信息

Nentwich M, Zschornak M, Sonntag M, Gumeniuk R, Gemming S, Leisegang T, Meyer D C

机构信息

Institute for Experimental Physics,Technical University Bergakademie Freiberg, 09596 Freiberg, Germany.

Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany.

出版信息

Acta Crystallogr B Struct Sci Cryst Eng Mater. 2020 Jun 1;76(Pt 3):378-410. doi: 10.1107/S2052520620003893. Epub 2020 May 15.

DOI:10.1107/S2052520620003893
PMID:32831258
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7278089/
Abstract

To gain an overview of the various structure reports on RSi and RTSi compounds (R is a member of the Sc group, an alkaline earth, lanthanide or actinide metal, T is a transition metal), compositions, lattice parameters a and c, ratios c/a, formula units per unit cell, and structure types are summarized in extensive tables and the variations of these properties when varying the R or T elements are analyzed. Following the structural systematization given in Part I, Part II focuses on revealing the driving factors for certain structure types, in particular, the electronic structure. Here, concepts of different complexity are presented, including molecular orbital theory, the principle of hard and soft acids and bases, and a Bader analysis based on Density Functional Theory calculations for representatives of the reported structure types. The potential Si/T ordering in different structures is discussed. Additionally, the influences from intrinsic and extrinsic properties (e.g. elemental size and electronics as well as lattice parameters and structure type) are investigated on each other using correlation plots. Thermal treatment is identified as an important factor for the ordering of Si/T atoms.

摘要

为了全面了解关于RSi和RTSi化合物(R为钪族、碱土金属、镧系或锕系金属成员,T为过渡金属)的各种结构报告,在详尽的表格中总结了其组成、晶格参数a和c、c/a比值、每晶胞的化学式单元以及结构类型,并分析了改变R或T元素时这些性质的变化。按照第一部分给出的结构系统化,第二部分着重揭示某些结构类型的驱动因素,特别是电子结构。这里介绍了不同复杂程度的概念,包括分子轨道理论、软硬酸碱原理以及基于密度泛函理论计算对所报道结构类型代表物的巴德分析。讨论了不同结构中潜在的Si/T有序化。此外,使用相关图研究了本征和非本征性质(如元素尺寸和电子性质以及晶格参数和结构类型)之间的相互影响。热处理被确定为Si/T原子有序化的一个重要因素。

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