He Zihao, Jian Jie, Misra Shikhar, Gao Xingyao, Wang Xuejing, Qi Zhimin, Yang Bo, Zhang Di, Zhang Xinghang, Wang Haiyan
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907-2045, USA.
Nanoscale. 2020 Sep 14;12(34):17886-17894. doi: 10.1039/d0nr04008h. Epub 2020 Aug 25.
A phase transition material, VO, with a semiconductor-to-metal transition (SMT) near 341 K (68 °C) has attracted significant research interest because of drastic changes in its electrical resistivity and optical dielectric properties. To address its application needs at specific temperatures, tunable SMT temperatures are highly desired. In this work, effective transition temperature (T) tuning of VO has been demonstrated via a novel Pt : VO nanocomposite design, i.e., uniform Pt nanoparticles (NPs) embedded in the VO matrix. Interestingly, a bidirectional tuning has been achieved, i.e., the transition temperature can be systematically tuned to as low as 329.16 K or as high as 360.74 K, with the average diameter of Pt NPs increasing from 1.56 to 4.26 nm. Optical properties, including transmittance (T%) and dielectric permittivity (ε') were all effectively tuned accordingly. All Pt : VO nanocomposite thin films maintain reasonable SMT properties, i.e. sharp phase transition and narrow width of thermal hysteresis. The bidirectional T tuning is attributed to two factors: the reconstruction of the band structure at the Pt : VO interface and the change of the Pt : VO phase boundary density. This demonstration sheds light on phase transition tuning of VO at both room temperature and high temperature, which provides a promising approach for VO-based novel electronics and photonics operating under specific temperatures.
一种相变材料VO,在接近341 K(68°C)时具有从半导体到金属的转变(SMT),因其电阻率和光学介电性能的急剧变化而引起了广泛的研究兴趣。为满足其在特定温度下的应用需求,人们非常希望实现可调节的SMT温度。在这项工作中,通过一种新颖的Pt:VO纳米复合材料设计,即VO基体中嵌入均匀的Pt纳米颗粒(NPs),实现了VO有效转变温度(T)的调节。有趣的是,实现了双向调节,即随着Pt NPs的平均直径从1.56 nm增加到4.26 nm,转变温度可以系统地调节到低至329.16 K或高至360.74 K。相应地,包括透过率(T%)和介电常数(ε')在内的光学性能也都得到了有效调节。所有Pt:VO纳米复合薄膜都保持了合理的SMT性能,即尖锐的相变和窄的热滞回线宽度。双向T调节归因于两个因素:Pt:VO界面处能带结构的重构和Pt:VO相界密度的变化。这一成果为VO在室温和高温下的相变调节提供了思路,为基于VO的新型电子学和光子学在特定温度下工作提供了一种有前景的方法。