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通过金属离子插层实现 VO 薄膜的可控相转变特性。

Controllable Phase Transition Properties in VO Films via Metal-Ion Intercalation.

机构信息

School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States.

School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.

出版信息

Nano Lett. 2023 Feb 22;23(4):1119-1127. doi: 10.1021/acs.nanolett.2c03286. Epub 2023 Jan 31.

DOI:10.1021/acs.nanolett.2c03286
PMID:36719402
Abstract

VO has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature () tuning in VO is desired. In this study, tailorable SMT characteristics in VO films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li during the intercalation process, of VO can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO phase transition toward room-temperature device applications and enables future real-time phase change property tuning.

摘要

VO 在传感器、智能窗户和储能设备方面具有广阔的应用前景,因为其在 340K 附近发生剧烈的半导体-金属转变(SMT),同时伴随着结构转变。为了将其应用推向室温,期望在 VO 中实现有效的转变温度()调谐。在这项研究中,通过电化学嵌入外来离子(例如锂离子),在 VO 薄膜中实现了可调节的 SMT 特性。通过控制嵌入过程中相对于 Li/Li 的相对电位,可以有效地、系统地将 VO 的调谐到 326.7 至 340.8K 的窗口内。这种有效的调谐可以归因于嵌入过程中观察到的应变和晶格畸变以及 VO 中载流子密度的变化。这一演示为 VO 相转变向室温器件应用的调谐开辟了新途径,并为未来的实时相变特性调谐奠定了基础。

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