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范德华力束缚的有机/二维绝缘体混合结构:并苯薄膜在BN(001)上的外延生长及表面缺陷的影响。

Van der Waals Bound Organic/2D Insulator Hybrid Structures: Epitaxial Growth of Acene Films on BN(001) and the Influence of Surface Defects.

作者信息

Günder Darius, Watanabe Kenji, Taniguchi Takashi, Witte Gregor

机构信息

Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany.

Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan.

出版信息

ACS Appl Mater Interfaces. 2020 Aug 26;12(34):38757-38767. doi: 10.1021/acsami.0c09527. Epub 2020 Aug 12.

DOI:10.1021/acsami.0c09527
PMID:32846485
Abstract

Combining 2D materials with functional molecular films enables the fabrication of van der Waals bound organic/inorganic hybrids that are of interest for future device architectures. Recently, the 2D dielectric hexagonal boron nitride (BN) has received particular attention since exfoliation allows the preparation of crystalline layers which have been utilized as ultrathin dielectrics in electronic devices. Here, we have studied the formation and structure of molecular films of the prototypical organic semiconductors pentacene (PEN) and perfluoropentacene (PFP) on BN. Special attention was paid to the influence of substrate surface defects on the film formation by comparing molecular films that were grown on BN substrates of various quality, including single crystals (representing the most ideal surface), briefly ion bombarded substrates, and exfoliated flakes. While X-ray diffraction (XRD) yields precise information about the crystalline structure of films grown on (large) single crystals, it is hardly applicable to analyze the films formed on exfoliated flakes because of their small size. Here, we demonstrate that in the case of flakes detailed structural analyses of the molecular films are possible by combining atomic force microscopy (AFM) with microspot UV/vis spectroscopy and optical polarization microscopy. On well-ordered BN single crystal surfaces both acenes form very smooth and epitaxial crystalline films where molecules adopt a recumbent orientation (even in 100 nm thick films). By contrast, both materials adopt an upright molecular orientation and different polymorphs on defective BN surfaces and reveal distinctly different film morphologies. On exfoliated flakes, PFP shows a film structure similar to that on the BN single crystals, while PEN films exhibit a structure as on defective BN substrates. In addition, a pronounced decoration of defect steps, which are probably created by the exfoliation process, was observed for PEN leading to the formation of tall and extended fibers where molecules adopt a recumbent orientation. The present study reveals different robustness in film growth on exfoliated BN flakes for various molecules, which has to be considered in their device integration, especially with regard to their optoelectronic properties such as light absorption or charge transport, which depend critically on the molecular orientation and crystalline order.

摘要

将二维材料与功能分子膜相结合,能够制造出范德华键合的有机/无机杂化材料,这对于未来的器件架构具有重要意义。最近,二维介电六方氮化硼(BN)受到了特别关注,因为剥离法可以制备出晶体层,这些晶体层已被用作电子器件中的超薄电介质。在此,我们研究了典型有机半导体并五苯(PEN)和全氟并五苯(PFP)在BN上的分子膜的形成和结构。通过比较在各种质量的BN衬底上生长的分子膜,包括单晶(代表最理想的表面)、经过短暂离子轰击的衬底和剥离薄片,特别关注了衬底表面缺陷对膜形成的影响。虽然X射线衍射(XRD)能提供有关在(大)单晶上生长的膜的晶体结构的精确信息,但由于剥离薄片尺寸小,它几乎不适用于分析在其上形成的膜。在此,我们证明,对于薄片情况,通过将原子力显微镜(AFM)与微点紫外/可见光谱和光学偏振显微镜相结合,可以对分子膜进行详细的结构分析。在有序的BN单晶表面上,两种并苯都形成非常光滑的外延晶体膜,其中分子呈平躺取向(即使在100 nm厚的膜中也是如此)。相比之下,在有缺陷的BN表面上,两种材料都采用直立分子取向并呈现不同的多晶型,且显示出明显不同的膜形态。在剥离薄片上,PFP显示出与在BN单晶上类似的膜结构,而PEN膜呈现出与在有缺陷的BN衬底上相同的结构。此外,观察到PEN对缺陷台阶有明显的修饰,这些缺陷台阶可能是由剥离过程产生的,导致形成了高大且延伸的纤维,其中分子呈平躺取向。本研究揭示了不同分子在剥离的BN薄片上生长膜时具有不同的稳健性,这在它们的器件集成中必须予以考虑,特别是在其光吸收或电荷传输等光电特性方面,这些特性严重依赖于分子取向和晶体有序度。

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