Marye Shambel Abate, Tsai Xin-Ying, Kumar Ravi Ranjan, Tarntair Fu-Gow, Horng Ray Hua, Tumilty Niall
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.
Sci Rep. 2024 Oct 8;14(1):23484. doi: 10.1038/s41598-024-73931-6.
The development of next-generation materials such as hBN and GaO remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type hBN and n-type GaO, forming a pseudo-vertical pn hBN/GaO heterojunction device. Rectification ratios > 10 (300 K) and [Formula: see text]400 (475 K) are observed and are amongst the highest values reported to date for ultra-thin hBN-based pn junctions. The measured current under forward bias is ~2 mA, which we attribute to the shallow Mg acceptor level (60 meV), and 0.2 µA at -10 V. Critically, device performance remains stable and highly repeatable after a multitude of temperature ramps to 475 K. Capacitance-voltage measurements indicate widening the depletion region under increasing reverse bias voltage and a built-in voltage of 2.34 V is recorded. The hBN p-type characteristic is confirmed by Hall effect, a hole concentration of [Formula: see text] cm and mobility of 24.8 cm/Vs is achieved. Mg doped hBN resistance reduces by >10 compared to intrinsic material. Future work shall focus on the optical emission properties of this material system.
诸如六方氮化硼（hBN）和氧化镓（GaO）等下一代材料的开发仍然是一个备受关注的热门话题，因为它们适用于高效深紫外（DUV）发射和功率电子应用。在本研究中，我们将p型hBN和n型GaO相结合，形成了一个准垂直pn hBN/GaO异质结器件。观察到整流比>10（300 K）和>400（475 K），这是迄今为止报道的基于超薄hBN的pn结的最高值之一。正向偏压下测得的电流约为2 mA，我们将其归因于浅Mg受主能级（60 meV），在-10 V时为0.2 μA。至关重要的是，在多次升温至475 K后，器件性能保持稳定且高度可重复。电容-电压测量表明，随着反向偏压电压的增加，耗尽区变宽，记录到的内建电压为2.34 V。通过霍尔效应证实了hBN的p型特性，实现了空穴浓度为 cm和迁移率为24.8 cm²/V·s。与本征材料相比，Mg掺杂的hBN电阻降低了>10倍。未来的工作将集中在该材料系统的光发射特性上。
