Jeong Kwang-Yong, Lee Seong Won, Choi Jae-Hyuck, So Jae-Pil, Park Hong-Gyu
Department of Physics, Korea University, Seoul 02841, Korea.
KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea.
Nanomaterials (Basel). 2020 Aug 25;10(9):1663. doi: 10.3390/nano10091663.
Efficient integration of a single-photon emitter with an optical waveguide is essential for quantum integrated circuits. In this study, we integrated a single-photon emitter in a hexagonal boron nitride (h-BN) flake with a Ag plasmonic waveguide and measured its optical properties at room temperature. First, we performed numerical simulations to calculate the efficiency of light coupling from the emitter to the Ag plasmonic waveguide, depending on the position and polarization of the emitter. In the experiment, we placed a Ag nanowire, which acted as the plasmonic waveguide, near the defect of the h-BN, which acted as the single-photon emitter. The position and direction of the nanowire were precisely controlled using a stamping method. Our time-resolved photoluminescence measurement showed that the single-photon emission from the h-BN flake was enhanced to almost twice the intensity as a result of the coupling with the Ag nanowire. We expect these results to pave the way for the practical implementation of on-chip nanoscale quantum plasmonic integrated circuits.
将单光子发射器与光波导有效集成对于量子集成电路至关重要。在本研究中,我们将一个单光子发射器集成到具有银等离子体波导的六方氮化硼(h-BN)薄片中,并在室温下测量了其光学性质。首先,我们进行了数值模拟,以计算取决于发射器位置和偏振的从发射器到银等离子体波导的光耦合效率。在实验中,我们将用作等离子体波导的银纳米线放置在用作单光子发射器的h-BN缺陷附近。使用压印方法精确控制纳米线的位置和方向。我们的时间分辨光致发光测量表明,由于与银纳米线耦合,h-BN薄片的单光子发射强度增强到几乎两倍。我们期望这些结果为片上纳米级量子等离子体集成电路的实际实现铺平道路。